Abstract:Artificially ordered Ge quantum dot (QD) arrays, where confined carriers can interact via exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ fine-probe electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in UHV, forming ordered arrays of nanoscale SiC precipitates that serve as templates for subsequent Ge quantum dot self-assembly during heteroepitaxy. This templating approach has so far produced interdot spacings down to 22.5 nm, and smaller spacings should be possible. We investigate the templated feature evolution during UHV processing to identify key mechanisms that must be controlled in order to preserve pattern fidelity and reduce broadening of the quantum dot size distribution. A key finding is that the presence of a small background of excess carbon reduces Ge surface diffusion, thereby suppressing coarsening to relatively high temperatures. In fact, coarsening of the carbonaceous nanodot template prior to conversion to SiC can be a more important contributor to size dispersion, and must be avoided through control of thermal budget.

Effect of Boron Pre-Deposition on Size Distribution of Self-Assembled Ge Islands Fabricated by UHV/CVD

Uniform Dome-Shaped Self-Assembled Ge Islands by UHV/CVD after Boron Pre-Deposition

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Boron-mediated growth of Ge quantum dots on Si(100) substrate

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

Influence of Boron Atom on Growth of Ge Quantum Dots on Si(100)

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Phosphorus-mediated growth of Ge quantum dots on Si(001)

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Effect of Si Content in Sige Islands on the Critical Size for Shape Evolution

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

Influence of Si Concentration on the Evolution of Shape and Size of Self-Assembled Ge Islands

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon