Abstract:Semiconductor-based quantum registers require scalable quantum-dots (QDs) to be accurately located in close proximity to and independently addressable by external electrodes. Si-based QD qubits have been realized in various lithographically-defined Si/SiGe heterostructures and validated only for milli-Kelvin temperature operation. QD qubits have recently been explored in germanium (Ge) materials systems that are envisaged to operate at higher temperatures, relax lithographic-fabrication requirements, and scale up to large quantum systems. We report the unique scalability and tunability of Ge spherical-shaped QDs that are controllably located, closely coupled between each another, and self-aligned with control electrodes, using a coordinated combination of lithographic patterning and self-assembled growth. The core experimental design is based on the thermal oxidation of poly-SiGe spacer islands located at each sidewall corner or included-angle location of Si3N4/Si-ridges with specially designed fanout structures. Multiple Ge QDs with good tunability in QD sizes and self-aligned electrodes were controllably achieved. Spherical-shaped Ge QDs are closely coupled to each other via coupling barriers of Si3N4 spacer layers/c-Si that are electrically tunable via self-aligned poly-Si or polycide electrodes. Our ability to place size-tunable spherical Ge QDs at any desired location, therefore, offers a large parameter space within which to design novel quantum electronic devices.

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Germanium Dots with Highly Uniform Size Distribution Grown on Si(100) Substrate by Molecular Beam Epitaxy

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices

Optical properties of Ge/Si quantum dot superlattices

Circularly Organized Quantum Dot Nanostructures of Ge on Si Substrates

Towards Controllable Growth of Self-Assembled Sige Single and Double Quantum Dot Nanostructures

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Photoluminescence of Ge quantum dots buried in silicon

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Thermally Oxidized Formation Of New Ge Dots Over As-Grown Ge Dots In The Si Capping Layer

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.