Abstract:We investigate the nanoheteroepitaxy of SiGe and Ge quantum dots (QDs) grown on nanotips substrates realized in Si(001) wafers. Due to the lattice strain compliance, enabled by the nanometric size of the tip and the limited dot/substrate interface area, which helps to reduce dot/substrate interdiffusion, the strain and SiGe composition in the QDs could be decoupled. This demonstrates a key advantage of the nanoheteroepitaxy over the Stranski-Krastanow growth mechanism. Nearly semi-spherical, defect-free, ∼100 nm wide SiGe QDs with different Ge contents were successfully grown on the nanotips with high selectivity and size uniformity. On the dots, thin dielectric capping layers were deposited, improving the optical properties by the passivation of surface states. Intense photoluminescence was measured from all samples investigated with emission energy, intensity, and spectral linewidth dependent on the SiGe composition of the QDs and the different capping layers. Radiative recombination occurs in the QDs, and its energy matches the results of band-structure calculations that consider strain compliance between the QD and the tip. The nanotips arrangement and the selective growth of QDs allow to studying the PL emission from only 3-4 QDs, demonstrating a bright emission and the possibility of selective addressing. These findings will support the design of optoelectronic devices based on CMOS-compatible emitters.

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(1 1 1) film surface

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(111) film surface

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Interface Interdiffusion Intensified by Formation of Quantum Dots

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Growth of Ge quantum dots on SiO2/Si(111) surface

Sige Quantum Dot Molecules Grown on Patterned Si (001) Substrates

Small ordered Ge quantum dots growth on Si (100) hollow nanopillars

Thermally Oxidized Formation Of New Ge Dots Over As-Grown Ge Dots In The Si Capping Layer

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Germanium Dots with Highly Uniform Size Distribution Grown on Si(100) Substrate by Molecular Beam Epitaxy

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization