Abstract:In recent years, quantum dots have been successfully grown by self-assembling processes. For opto-electronic device applications, the quantum-dot structures have advantages such as reduced phonon scattering, longer carrier lifetime, and lower detector noise due to low-dimensional confinement effect. Comparing to traditional optoelectronic III-V and other materials, self-assembled Ge quantum dots grown on Si substrates have a potential to be monolithically integrated with advanced Si-based technology. in this paper, we describe the growth of self-assembled, guided Ge quantum dots, and Ge quantum-dot superlattices on Si. For dot growth, issues such as growth conditions and their effects on the dot morphology are reviewed. Then vertical correlation and dot morphology evolution are addressed in relation to the critical thickness of Ge quantum-dot superlattices. In addition, we also discuss the quantum-dot p-i-p photodetectors (QDIPs) and n-i-n photocletectors for mid-infrared applications, and the quantum-dot p-i-n photocletectors for 1.3-1.55 mu m for communications applications. The wavelength of SiGe p-i-p QDIP can be tuned by the size as grown by various patterning methods. Photoresponse is demonstrated for an n-i-n structure in both the mid-infrared and far-infrared wavelength ranges. The p-i-n diodes exhibit low dark current and high quantum efficiency. The characteristics of fabricated light-emitting diode (LED) devices are also discussed, and room-temperature electroluminescence is observed for Ge quantum-dot LED. The results indicate that Ge dot materials are potentially applicable for mid-infrared (8-12 mu m) detectors as well as fiber-optic (1.3-1.55 mu m) communications.

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Optical properties of Ge/Si quantum dot superlattices

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Interface Interdiffusion Intensified by Formation of Quantum Dots

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Critical Thickness of Self-Assembled Ge Quantum Dot Superlattices

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Short-Range Order Structures of Self-Assembled Ge Quantum Dots Probed by Multiple-Scattering Extended X-Ray Absorption Fine Structure

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Investigation of Ge-Si Atomic Interdiffusion in Ge Nano-dots Multilayer Structure by Double Crystal X-ray Diffraction

Evolution of Ge/Si Quantum Dots Self-Assembled Grown by Ion Beam Sputtering

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si

Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

Microstructures of Ge/Si Superlattices Growth at Low Temperature

Raman Scattering Study for Self-Organized Ge Quantum Dots Formed on Si Substrate