Abstract:In recent years, quantum dots have been successfully grown by self-assembling processes. For opto-electronic device applications, the quantum-dot structures have advantages such as reduced phonon scattering, longer carrier lifetime, and lower detector noise due to low-dimensional confinement effect. Comparing to traditional optoelectronic III-V and other materials, self-assembled Ge quantum dots grown on Si substrates have a potential to be monolithically integrated with advanced Si-based technology. in this paper, we describe the growth of self-assembled, guided Ge quantum dots, and Ge quantum-dot superlattices on Si. For dot growth, issues such as growth conditions and their effects on the dot morphology are reviewed. Then vertical correlation and dot morphology evolution are addressed in relation to the critical thickness of Ge quantum-dot superlattices. In addition, we also discuss the quantum-dot p-i-p photodetectors (QDIPs) and n-i-n photocletectors for mid-infrared applications, and the quantum-dot p-i-n photocletectors for 1.3-1.55 mu m for communications applications. The wavelength of SiGe p-i-p QDIP can be tuned by the size as grown by various patterning methods. Photoresponse is demonstrated for an n-i-n structure in both the mid-infrared and far-infrared wavelength ranges. The p-i-n diodes exhibit low dark current and high quantum efficiency. The characteristics of fabricated light-emitting diode (LED) devices are also discussed, and room-temperature electroluminescence is observed for Ge quantum-dot LED. The results indicate that Ge dot materials are potentially applicable for mid-infrared (8-12 mu m) detectors as well as fiber-optic (1.3-1.55 mu m) communications.

Critical Thickness of Self-Assembled Ge Quantum Dot Superlattices

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Optical properties of Ge/Si quantum dot superlattices

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Self-organization of the InGaAs/GaAs quantum dots superlattice

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

Underlying Strain-Induced Growth of the Self-Assembled Ge Quantum-Dots Prepared by Ion Beam Sputtering Deposition

Three-Dimensional Finite-Element Simulations of the Self-Organized Growth of Quantum Dot Superlattices

Optical Phonons in Self-Assembled Ge Quantum Dot Superlattices: Strain Relaxation Effects

Finite Element Analysis on Stress Distribution in Buried Quantum Dots

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

The Effect of Plastic Strain Relaxation on the Morphology of Ge Quantum Dot Superlattices

Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications

Dependence of Elastic Strain Field on the Self-Organized Ordering of Quantum Dot Superlattices

Superlattice Growth Via MBE and Green’s Function Techniques

Optical And Structural Investigation Of Stacked Ge Quantum Dots

Growth Of Ge Quantum Dot Superlattices For Thermoelectric Applications

Investigation of the Strain Distribution of GaN/AlN Wurtzite Structure Material Self-Organized Truncated Pyramid Shaped Quantum Dot

Optical and Acoustic Phonon Modes in Self-Organized Ge Quantum Dot Superlattices

Thermally Oxidized Formation Of New Ge Dots Over As-Grown Ge Dots In The Si Capping Layer