Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Finite Element Analysis on Stress Distribution in Buried Quantum Dots

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Strain Distribution in Arbitrarily Shaped Quantum Dots with Nonuniform Composition

Elastic fields in quantum dots arrays: A three-dimensional finite element study

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

The Calculation of Strain Distribution in Quantum Dots with Green Method

Size and Geometry Dependence of Surface Strain fields in Systems of Buried Quantum Dots

An Approach for Calculating Strain Distributions in Arbitrarily Shaped Quantum Dots

A Perturbation Theory For Calculating Strain Distributions In Heterogeneous And Anisotropic Quantum Dot Structures

The influence of surface stress on the equilibrium shape of strained quantum dots

Effect of Elastic Anisotropy on the Elastic Fields and Vertical Alignment of Quantum Dots

Critical Thickness of Self-Assembled Ge Quantum Dot Superlattices

The Effects of A Stress Field and Chemical Diffusion on Electronic Behaviour in Inas/Gaas Quantum Dots

Computer Simulation of Quantum Dot Surface under Stress

Shape-dependent composition profile in epitaxial alloy quantum dots: A phase-field simulation

Vertical Self-Alignment of Quantum Dots in Superlattice

Monte Carlo Simulation of Quantum Dots 2D-3D Growth by MBE

Equilibrium Critical Size of Coherent InSb/GaSb Quantum Dot

Feasibility study for thermal-field directed self-assembly of heteroepitaxial quantum dots

The elastic relaxation energy and equilibrium aspect ratio of self-organized pyramidal quantum dot

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots