Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Strain Distribution in Arbitrarily Shaped Quantum Dots with Nonuniform Composition

An Approach for Calculating Strain Distributions in Arbitrarily Shaped Quantum Dots

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

A Perturbation Theory For Calculating Strain Distributions In Heterogeneous And Anisotropic Quantum Dot Structures

Finite Element Analysis on Stress Distribution in Buried Quantum Dots

Compatible Composition Profiles and Critical Sizes of Alloyed Quantum Dots

Shape-dependent composition profile in epitaxial alloy quantum dots: A phase-field simulation

The influence of surface stress on the equilibrium shape of strained quantum dots

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Computer Simulation of Quantum Dot Surface under Stress

The Strain Distribution of Low-Dimensional Semiconductor Materials

Elastic Fields In Quantum Dot Structures With Arbitrary Shapes And Interface Effects

The Effects of A Stress Field and Chemical Diffusion on Electronic Behaviour in Inas/Gaas Quantum Dots

Large and uniform optical emission shifts in quantum dots externally strained along their growth axis

Formation of Strain-Induced Quantum Dots in Gated Semiconductor Nanostructures

Asymmetrical quantum dot growth on tensile and compressive-strained ZnO nanowire surfaces

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Size and Geometry Dependence of Surface Strain fields in Systems of Buried Quantum Dots

Theory of strain tunning exction coupling in self-assembled InAs/GaAs quantum dots

Exciton polarization, fine structure splitting and quantum dot asymmetry under uniaxial stress

Strain-graded quantum dots with spectrally pure, stable and polarized emission