Computer Simulation of Quantum Dot Surface under Stress

Xiaoming Liu,Zhuo Zhuang,Tong Zhang
DOI: https://doi.org/10.1007/978-3-540-48260-4_115
2006-01-01
Abstract:In thin film structure, a traction-free quantum dot surface is usually under large stress for the presence of misfit strain between substrate and film. Such kind of material surface becomes unstable and roughens. The surface perturbation will rapidly lead to the breaking up of the coat, and the films eventually become damaged. In this paper, a variational formulation is proposed to study the evolution of the stressed quantum dot structure. Surface diffusion is considered as the dominant mass transport mechanism, while mass transport will be significant when process has the features of severe working condition such as relatively high stress, high temperature, electric current, small size scale. The elastic field was obtained by the first-order perturbation solutions. In our approach, the surface shape is expanded in terms of a complete set of basis functions, and surface governing equations can be obtained by the principle of minimization of energy. Our simulations reveal that surface profile grows due to the destabilizing influence of the large stress effects and shrinks due to the stabilizing influence of small stress effects. The competition between elastic strain energy and surface energy can lead to the growth of surface profile perturbations at large stress, small surface tension. The misfit strain between film and substrate can significantly influence the surface evolution.
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