Abstract:Epitaxial thin film growth by vapor deposition or molecular beam epitaxy under ultra-high vacuum conditions generally occurs in two stages: (i) nucleation and growth of well-separated islands on the substrate; (ii) subsequent formation of a thicker continuous film with possible kinetic roughening. For homoepitaxial growth, two-dimensional (2D) monolayer islands are formed during submonolayer deposition. Typically, the presence of a step-edge barrier inhibits downward transport and leads to the formation of mounds (multilayer stacks of 2D islands) during multilayer growth. For heteroepitaxial growth, islands formed in the initial stages of deposition sometimes have a 2D monolayer structure. However, they may instead exhibit bilayer or 3D multilayer structure due to, e.g., a high film surface energy, strain, or quantum size effects. Various growth modes are possible for thicker films. Atomistic modeling provides the most detailed picture of film growth. For coherent (defect-free) epitaxial films, lattice-gas modeling analyzed by kinetic Monte Carlo simulation (KMC) is particularly successful in describing film growth on the appropriate time and length scales. For large islands or complex systems, another effective and instructive approach is laterally coarse-grained step-dynamics modeling which tracks only the evolution of step edges in each layer. However, fully coarse-grained 3D continuum modeling for the evolution of a film height function does not yet have predictive capability. Examples are provided for: Ag homoepitaxy on (100), (111) and (110) surfaces; Ag heteroepitaxy on lattice-matched substrates including NiAl(110), NiAl(100), and Fe(100); and Ag heteroepitaxy on 5-fold icosohedral Al-Pd-Mn and 2-fold decagonal Al-Cu-Co quasicrystalline surfaces.

A Numerical Study of Stress Controlled Surface Diffusion During Epitaxial Film Growth

Numerical Simulation of Diffusion Controlled Surface Evolution

Some general properties of stress-driven surface evolution in a heteroepitaxial thin film structure

Evolution of Surface Waviness in Thin Films Via Volume and Surface Diffusion

Computer Simulations of the Stranski–Krastanov Growth of Heteroepitaxial Films with Elastic Anisotropy

Analytical model of transient compressive stress evolution during growth of high diffusivity thin films on substrates

Computer Simulation of Quantum Dot Surface under Stress

FORMATION OF CRACK-LIKE DIFFUSION WEDGES AND COMPRESSIVE STRESS EVOLUTION DURING THIN FILM GROWTH WITH INHOMOGENEOUS GRAIN BOUNDARY DIFFUSIVITY

From Initial to Late Stages of Epitaxial Thin Film Growth: Stm Analysis and Atomistic or Coarse-Grained Modeling

Stress-driven Surface Evolution in Heteroepitaxial Thin Films: Anisotropy of the Two-Dimensional Roughening Mode

SURFACE ROUGHENING OF HETEROEPITAXIAL THIN FILMS

Sustained Surface Wave Propagation Induced by Surface Diffusion Driven by Strain Relaxation in A Heteroepitaxial Film

Simulation of Si Film Growth on Si(100)-(2×1) Surface

Simulation of surface morphology for Sc thin film in the initial growth stage

Stress-driven instability in growing multilayer films

Continuum Modeling of Surface Roughening in Heteroepitaxial Structures Based on Phase Field Theory

Coupled Grain Boundary and Surface Diffusion in A Polycrystalline Thin Film Constrained by Substrate

Growth Instability of Strained Film: An Elastic Green’s Function Force Monopole Approach

Interface Stability in Stressed Solid-Phase Epitaxial Growth

Epitaxial growth in dislocation-free strained alloy films: Morphological and compositional instabilities

Confined Capillary Stresses During the Initial Growth of Thin Films on Amorphous Substrates