Abstract:Epitaxial thin film growth by vapor deposition or molecular beam epitaxy under ultra-high vacuum conditions generally occurs in two stages: (i) nucleation and growth of well-separated islands on the substrate; (ii) subsequent formation of a thicker continuous film with possible kinetic roughening. For homoepitaxial growth, two-dimensional (2D) monolayer islands are formed during submonolayer deposition. Typically, the presence of a step-edge barrier inhibits downward transport and leads to the formation of mounds (multilayer stacks of 2D islands) during multilayer growth. For heteroepitaxial growth, islands formed in the initial stages of deposition sometimes have a 2D monolayer structure. However, they may instead exhibit bilayer or 3D multilayer structure due to, e.g., a high film surface energy, strain, or quantum size effects. Various growth modes are possible for thicker films. Atomistic modeling provides the most detailed picture of film growth. For coherent (defect-free) epitaxial films, lattice-gas modeling analyzed by kinetic Monte Carlo simulation (KMC) is particularly successful in describing film growth on the appropriate time and length scales. For large islands or complex systems, another effective and instructive approach is laterally coarse-grained step-dynamics modeling which tracks only the evolution of step edges in each layer. However, fully coarse-grained 3D continuum modeling for the evolution of a film height function does not yet have predictive capability. Examples are provided for: Ag homoepitaxy on (100), (111) and (110) surfaces; Ag heteroepitaxy on lattice-matched substrates including NiAl(110), NiAl(100), and Fe(100); and Ag heteroepitaxy on 5-fold icosohedral Al-Pd-Mn and 2-fold decagonal Al-Cu-Co quasicrystalline surfaces.

Derivation of a Continuum Model for Epitaxial Growth with Elasticity on Vicinal Surface.

A continuum model for the growth of epitaxial films

Continuum Model of Surface Roughening and Epitaxial Breakdown During Low-Temperature Ge(001) Molecular Beam Epitaxy

Continuum Modeling of Surface Roughening in Heteroepitaxial Structures Based on Phase Field Theory

Continuum Theory of Epitaxial Crystal Growth. I

Derivation of a heteroepitaxial thin-film model

New Epitaxial Thin‐film Models and Numerical Approximation

Morphological instability, evolution, and scaling in strained epitaxial films: An amplitude equation analysis of the phase field crystal model

Growth Instability of Strained Film: An Elastic Green’s Function Force Monopole Approach

Instability and decomposition on the surface of strained alloy films

Origin of residual strain in heteroepitaxial films

Liquid Phase Heteroepitaxial Growth on Convex Substrate Using Binary Phase Field Crystal Model

Epitaxial growth in dislocation-free strained alloy films: Morphological and compositional instabilities

From Initial to Late Stages of Epitaxial Thin Film Growth: Stm Analysis and Atomistic or Coarse-Grained Modeling

A Numerical Study of Stress Controlled Surface Diffusion During Epitaxial Film Growth

Influences of Misfit Strains on Liquid Phase Heteroepitaxial Growth

Nonlinear evolution of a morphological instability in a strained epitaxial film

Morphological Instabilities in Thin-Film Growth and Etching

A continuum description of the energetics and evolution of stepped surfaces in strained nanostructures

Some general properties of stress-driven surface evolution in a heteroepitaxial thin film structure

Phase-field Modeling of ATG Instability in Allen–Cahn Framework