Abstract:Heteroepitaxial thin films are subjected to very large stresses, typically in the giga-Pascal range, due to lattice mismatch. Their applications in microelectronic devices have drawn a growing research effort which involves, in part, a better understanding of the processes by which defects such as cracks and dislocations are nucleated in a thin layer structure. One of the possible defect mechanisms is related to a stress-induced morphological instability which tends to roughen the film surface by mass diffusion during film growth or annealing. A major objective of this paper is to show that a few invariance properties of the strain energy density and the chemical potential in a heteroepitaxial structure can be utilized to obtain some valuable information concerning the equilibrium profile, the stress concentration and the formation of cusp-like stress singularities without having to resort to full-scale numerical studies. The process of cusp-formation requires a critical film thickness Hcr which is independent of the Matthews critical thickness herfor misfit dislocation formation by propagation of threading dislocations within the film. Calculations show that Hcr is significantly larger than hcr for a wide range of misfit strain, suggesting that nucleation of threading dislocations via cusp-formation could be critical in the overall process of strain relaxation in this type of film. Finally, a “phase” diagram is constructed to categorize important consequences of the surface evolution based on the instability wavelength and average film thickness.

Nonlinear effects for island coarsening and stabilization during strained film heteroepitaxy

Morphologies of Epitaxial Islands on a Lattice-Misfitted Substrate

Nonlinear evolution of a morphological instability in a strained epitaxial film

The formation, ripening and stability of epitaxially strained island arrays

Morphological instability, evolution, and scaling in strained epitaxial films: An amplitude equation analysis of the phase field crystal model

A Three-Dimensional Concurrent Atomistic/continuum Analysis of an Epitaxially Strained Island

Epitaxial growth in dislocation-free strained alloy films: Morphological and compositional instabilities

Island formation in heteroepitaxial growth

Growth Instability of Strained Film: An Elastic Green’s Function Force Monopole Approach

Strain-Driven Instability of A Single Island and A Hexagonal Island Array on Solid Substrates

Retracted: Thermodynamic Self-Limiting Growth of Heteroepitaxial Islands Induced by Nonlinear Elastic Effect (retracted Article. See Vol. 17, Pg. 2110, 2017)

Formation of Self-Assembled Heteroepitaxial Islands in Elastically Anisotropic Films

Instability and decomposition on the surface of strained alloy films

Morphological stability of epitaxy films on pre-strained substrates

Dislocation-free 3D islands in highly mismatched epitaxy: An equilibrium study with anharmonic interactions

SURFACE ROUGHENING OF HETEROEPITAXIAL THIN FILMS

Size Effects In Epitaxial Ferroelectric Islands And Thin Films

Morphological Relaxation of Strained Epitaxial Films for Stripe‐Geometry Devices

Dependence of surface strain on island geometry in embedded quantum-dot systems

Some general properties of stress-driven surface evolution in a heteroepitaxial thin film structure

Anisotropy Effect on Heteroepitaxial Growth of Self-Assembled Islands