Abstract:Accounting for the anharmonicity of the real interatomic potentials in a model in 1+1 dimensions shows that coherent 3D islands can be formed on the wetting layer in a Stranski-Krastanov growth mode predominantly in compressed overlayers. Coherent 3D islanding in expanded overlayers could be expected as an exception rather than as a rule. The thermodynamic driving force of formation of coherent 3D islands on the wetting layer of the same material is the weaker adhesion of the atoms near the islands edges. The average adhesion gets weaker with increasing island's thickness but reaches a saturation after several monolayers. A misfit greater than a critical value is a necessary condition for coherent 3D islanding. Monolayer height islands with a critical size appear as necessary precursors of the 3D islands. The 2D-3D transformation from monolayer-high islands to three-dimensional pyramids takes place through a series of stable intermediate 3D islands with discretely increasing thickness.
What problem does this paper attempt to address?
The problems that this paper attempts to solve mainly focus on understanding the thermodynamic driving force and its mechanism for the formation of dislocation - free (coherent) three - dimensional islands during highly lattice - mismatched epitaxial growth. Specifically, the research aims to answer the following key questions:
1. **Thermodynamic Driving Force**: Why, in some cases, do materials form coherent 3D islands on the wetting layer, and these islands have the same strain level as the underlying wetting layer? This involves understanding the boundary structure and energy between the 3D islands and the wetting layer.
2. **Compressive and Expansive Overlayers**: Why are coherent 3D islands more commonly seen in compressive overlayers and less common in expansive overlayers? This requires explaining the influence of lattice mismatch on the inter - atomic interactions.
3. **Critical Mismatch Value**: Is there a critical lattice - mismatch value that makes the formation of coherent 3D islands possible? If so, what is this value?
4. **2D - to - 3D Transition**: Are two - dimensional single - layer islands a necessary precursor for the formation of three - dimensional islands? If so, how does this transition occur? Are there a series of stable intermediate states?
5. **Stability and Morphology**: How does the stability of 3D islands of different thicknesses change? What are their final morphologies?
### Research Background
During highly lattice - mismatched epitaxial growth, especially in the Stranski - Krastanov (SK) mode, materials usually form some nano - scale three - dimensional islands after the initial planar growth stage. These islands are usually dislocation - free, that is, they maintain coherent strain with the substrate. However, although this phenomenon has been widely observed, the underlying physical mechanisms are still not fully understood.
### Main Contributions of the Paper
By introducing an anharmonic interaction model, the authors attempt to explain the above problems. They find that:
- **Thermodynamic Driving Force**: The formation of 3D islands is mainly due to the weakening of atomic adhesion near the edge of the wetting layer. As the height of the island increases, the average adhesion gradually weakens and tends to saturate.
- **Compressive and Expansive Overlayers**: In compressive overlayers, the attractive branch between atoms is stronger, leading to easier formation of 3D islands; while in expansive overlayers, the repulsive branch between atoms is stronger, suppressing the formation of 3D islands.
- **Critical Mismatch Value**: There indeed exists a critical lattice - mismatch value. When this value is exceeded, the formation of 3D islands becomes favorable. For different material systems, this critical value may vary.
- **2D - to - 3D Transition**: Single - layer - high 2D islands are indeed a necessary precursor for the formation of 3D islands, and this transition is gradually completed through a series of stable or metastable intermediate states.
In summary, through theoretical models and calculations, this paper reveals the microscopic mechanisms of dislocation - free 3D island formation during highly lattice - mismatched epitaxial growth, providing an important theoretical basis for understanding and optimizing the preparation of nanostructures such as semiconductor quantum dots.