Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Spontaneous Formation of Vertically Anticorrelated Epitaxial Islands on Ultrathin Substrates

Dynamics of Self-Organized Epitaxial Island Formation under Controlled Annealing

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Size Effects In Epitaxial Ferroelectric Islands And Thin Films

A Binary Phase Field Crystal Study for Liquid Phase Heteroepitaxial Growth

Spontaneous Ordering of Composition Pattern in an Epitaxial Monolayer by Subsurfacial Dislocation Array

Self-assembly of quantum dots: effect of neighbor islands on the wetting in coherent Stranski-Krastanov growth

Strain-Mediated Patterning of Surface Nanostructure by the Subsurface Island Array

Influence of Substrate-Mediated Interactions on the Self-Organization of Adatom Clusters

Influences of Misfit Strains on Liquid Phase Heteroepitaxial Growth

Strain Self-Releasing Mechanism in Heteroepitaxy on Nanowires

Anisotropy Effect on Heteroepitaxial Growth of Self-Assembled Islands

Three-dimensional Analysis of the Guided-Assembled Growth of Heteroepitaxial Islands on Imperfectly Pre-Patterned Surfaces

Heteroepitaxial Growth of Quantum Wire Arrays Through Prepatterning Substrate Surfaces

Nucleation-Mediated Lateral Growth Of Crystalline Islands On Foreign Substrate: An Origin Of Long-Range Ordering In Pattern Formation

Dislocation-free 3D islands in highly mismatched epitaxy: An equilibrium study with anharmonic interactions

Quantum dot self-assembly driven by a surfactant-induced morphological instability

Formation Of Surface Structures During Heteroepitaxial Thin Film Growth On Prepatterned Substrates

Spontaneous ordering, strain control and mutlifunctionality in vertical nanocomposite heteroepitaxial films

Vertical Self-Alignment of Quantum Dots in Superlattice

Self-assembly Growth of a Multiferroic Topological Nanoisland Array.