Abstract:This thesis is based on results concerning the formation of semiconductor self-assembled quantum dots. The quantum dots have been grown by metal organic vapour phase epitaxy in the Stranski-Krastanow growth mode. This growth mode is based on a strain-induced transition from two-dimensional layer-by-layer growth towards three-dimensional island growth. The resulting morphology consists of coherent, size homogene, single-crystalline islands (self-assembled quantum dots) on a thin remaining wetting layer. The samples have been extensively characterized by atomic force microscopy (AFM), photoluminescence (PL) spectroscopy, and transmission electron microscopy (TEM). The investigated materials systems are InP on GaInP(GaAs), InAs on InP, and GaInP on GaP. Experimentally it has been verified that InP island formation on GaInP(GaAs) is nucleation controlled. The areal island density increases with decreasing deposition temperature and increasing deposition rate. For a constant amount of island material, there is an inverse relationship between island density and size. A post-growth annealing period, in the order of minutes, can make density independent control of island sizes possible. By annealing, the islands decrease in height and show a blueshift in PL emission. Investigations in the materials system InAs/InP have shown that the island formation can be very sensitive to substrates and surface preparation. Detailed investigations of GaInP islands on GaP have shown that these islands have an uncommon shape with faced top islands situated on flat base regions. Energy dispersive X-ray spectroscopy (EDS) has shown that the top islands are In rich (In/Ga=3/2) and that the base regions are slightly Ga rich. Theoretical models for the island formation are presented. These are based on rate equations and have been used to calculate InP/GaInP(GaAs) island densities at varying deposition conditions. Average island sizes in the same materials system have been calculated with a materials balancing model. With this model it is also possible to estimate the deposition conditions that give rise to bimodal island size distributions. (Less)

Self-assembly of quantum dots: effect of neighbor islands on the wetting in coherent Stranski-Krastanov growth

Some thermodynamic aspects of self-assembly of arrays of quantum dots

Quantum dot self-assembly driven by a surfactant-induced morphological instability

Wetting Layer Evolution Upon Quantum Dots Self-Assembly

Vertical Self-Alignment of Quantum Dots in Superlattice

Quantum Dot Growth on a Stripe-Pattern

Spontaneous Formation of Vertically Anticorrelated Epitaxial Islands on Ultrathin Substrates

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

Strain-controlled correlation effects in self-assembled quantum dot stacks

Dynamics of Self-Organized Epitaxial Island Formation under Controlled Annealing

Three-Dimensional Finite-Element Simulations of the Self-Organized Growth of Quantum Dot Superlattices

Densities and Sizes of Self-assembled Quantum Dots Grown by MOVPE

Nonlinear effects for island coarsening and stabilization during strained film heteroepitaxy

Dislocation-free 3D islands in highly mismatched epitaxy: An equilibrium study with anharmonic interactions

Interaction between islands in kinetic models of epitaxial growth of quantum dots

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

Three-dimensional Analysis of the Guided-Assembled Growth of Heteroepitaxial Islands on Imperfectly Pre-Patterned Surfaces

Dependence of Elastic Strain Field on the Self-Organized Ordering of Quantum Dot Superlattices

Self-assembled island formation in heteroepitaxial growth

The influence of surface stress on the equilibrium shape of strained quantum dots

Kinetic Monte Carlo Simulations of Three-Dimensional Self-Assembled Quantum Dot Islands