Abstract:Strained epitaxy has been shown to produce pyramidal-shaped semiconductor dot structures by single-step epitaxy. The very high density of these dots (approaching per wafer) and their ever improving uniformity suggest that these features could have important applications in future microelectronics. Understanding the structural and electronic properties of these quantum dots is therefore of great importance. In this paper, we examine some of the physics controlling the performance of devices that could be made from such structures. The self-assembled quantum dots are highly strained and we will examine the strain tensor in these quantum dots using a valence force-field model. In this paper we will address the following issues: (1) What is the general nature of the strain tensor in self assembled quantum dots? (2) What are the electron and hole spectra for InAs-GaAs quantum dots? (a) What are the important intersubband radiative and nonradiative scattering processes in the self assembled quantum dots? In particular, we will discuss how the electron-phonon interactions are modified in the quantum dot structures. Consequences for uncooled intersubband devices such as lasers, detectors, and quantum transistors will be briefly discussed.

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Electric fields and valence band offsets at strained [111] heterojunctions

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Influences of Strain on Binding Energies of Excitons in InAs/GaAs Quantum Dot Molecules

Strain Effects on Resonant Parameters in Asymmetric In1−xGaxAs Quantum Dot Molecules

The Elastic Strain Field Distribution of Inas/Gaas Self-Organized Periodical Quantum Dots' Array

Investigation of the dependence of volume, cap layer and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot

Conduction Band Spectra in Self-Assembled Inas/Gaas Dots: A Comparison of Effective Mass and an Eight-Band Approach

The Strain Distributions and Carrier'S Confining Potentials of Self-Organized Inas/Gaas Quantum Dot

Strain Distribution And Electronic Spectra Of Inas/Gaas Self-Assembled Dots: An Eight-Band Study

Electron-Hole Alignment in InAs/GaAs Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape

Influence of the Strain on the Energy Levels of Semiconductor Quantum Dots

Theory of strain tunning exction coupling in self-assembled InAs/GaAs quantum dots

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots

Exciton Confinement in Strain-Engineered Metamorphic InAs/InxGa1-xAs Quantum Dots