Abstract:Self-assembly effects in strained epitaxy have made it possible to grow high quality semiconductor dot structures. Recently several groups have shown good performance in quantum dot lasers. In particular for the In0.4Ga0.6As/GaAs quantum dot lasers differential gain of similar to 10(-14) cm(2) and modulation bandwidths of 7-8 GHz have been demonstrated [1,2].The following observations suggest that the operation of self-assembled lasers will be different from conventional semiconductor lasers in important aspects: (i) the electronic states are discrete - like those in an atomic system; (ii) the separation of the ground and excited states in the quantum dot conduction band states is larger than the optical phonon energy suggesting that processes other than optical phonon interaction are responsible for carrier thermalization and modulation; (iii) the high strain in the system suggests that simple effective mass pictures will not be accurate in describing the system.In this paper, we examine the electronic, optical and dynamic properties of self-assembled lasers. The formalism is based on an eight-band k.p model [3] and a modified rate equations for quantum dots. A Monte-Carlo simulation is also done to compare with the rate equation results.Our results will focus on the following issues: (i) the role of cavity loss and quantum dot density in determining the position of the lasing peaks (i.e whether ground state or excited state lasing will occur); (ii) the dynamic response of quantum dot lasers and the gain compression factor due to Pauli exclusion principle.

Conduction Band Spectra in Self-Assembled Inas/Gaas Dots: A Comparison of Effective Mass and an Eight-Band Approach

Strain Distribution And Electronic Spectra Of Inas/Gaas Self-Assembled Dots: An Eight-Band Study

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

Interband Transition Distributions in the Optical Spectra of Inas/Gaas Self-Assembled Quantum Dots

Electronic Propertiesof InAs/GaAs Self‐assembled Quantum Dots: Beyond the Effective Mass Approximation

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Enhanced Intraband Transitions with Strong Electric Field Asymmetry in Stacked InAs/GaAs Self-Assembled Quantum Dots

Numerical Simulation of the Dynamic Response of Self-Assembled In0.4ga0.6as/Gaas Quantum Dot Lasers

Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

Theoretical Study of Quantum Confined Stark Shift in Inas/Gaas Quantum Dots

The Calculation for Strain Distributions and Electronic Structure of InAs/GaAs Quantum Dots Based on the Eight-Band K·p Theory

Electronic Structure Of Self-Assembled Inas/Inp Quantum Dots: Comparison With Self-Assembled Inas/Gaas Quantum Dots

The Strain Distributions and Carrier'S Confining Potentials of Self-Organized Inas/Gaas Quantum Dot

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Valence Band Structures Of Inas/Gaas Quantum Rings Using The Fourier Transform Method

Multiband Theory of Multi-Exciton Complexes in Self-Assembled Quantum Dots

The Influences of Thickness of Spacing Layer and the Elastic Anisotropy on the Strain Fields and Band Edges of InAs/GaAs Conical Shaped Quantum Dots