Abstract:The effects of inversion asymmetry on the anisotropic optical transition in the presence of electric field (Pockels effect) in GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As quantum wells and superlattices are investigated theoretically. Within an 8\ifmmode\times\else\texttimes\fi{}8 k\ensuremath{\cdot}p effective mass Hamiltonian formalism, in which the linear k, ${\mathit{k}}^{3}$, \ensuremath{\epsilon} (strain due to the piezoelectric effect), \ensuremath{\epsilon}k, and Rashba terms are taken into account, we have derived the renormalized effective Hamiltonian for the electron and hole, respectively. The effects of the inversion asymmetry and the hole mixing on the spin-split subband structures and the dependence of optical transition matrix elements on the polarization of incident light are fully presented. The microscopic model clearly shows that the inversion asymmetry is responsible for the Pockels effect. The roles played by the hole mixing in the enhanced quantum well Pockels effect mediated by the electron-hole pairs are shown by our calculations. Thus, we develop a theory with exciton states with eight spin components (due to the broken twofold degeneracy of the electrons) in the quantum well and calculate the excitonic spectra. The symmetry analysis and numerical results indicate that the excitonic anisotropic behavior results from the interference between different spin components of holes, which, owing to the heavy- and light-hole mixing, is enhanced significantly compared with the bulk material, especially for those exciton states whose dominant component does not coincide with its optically active component. Comparison between theory and experiment is discussed.

Enhanced Intraband Transitions with Strong Electric Field Asymmetry in Stacked InAs/GaAs Self-Assembled Quantum Dots

Anomalous Quantum-Confined Stark Effects in Stacked InAs/GaAs Self-Assembled Quantum Dots.

Anomalous Quantum Confined Stark Effects In Vertically Coupled Inas/Gaas Self-Assembled Quantum Dots

Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

Scattered Light Models of Protostellar Envelopes: Multiple Outflow Cavities and Misaligned Circumstellar Disks

Interband Transition Distributions in the Optical Spectra of Inas/Gaas Self-Assembled Quantum Dots

Anomalous Quantum-Confined Stark Effects in StackedInAs/GaAsSelf-Assembled Quantum Dots

Electronic Propertiesof InAs/GaAs Self‐assembled Quantum Dots: Beyond the Effective Mass Approximation

2D–3D transitions in the quantum Stark effect in self-assembled InAs/GaAs quantum dots

Conduction Band Spectra in Self-Assembled Inas/Gaas Dots: A Comparison of Effective Mass and an Eight-Band Approach

Asymmetric Stark shifts of exciton in InAsGaAs pyramidal quantum dots

Optical Transitions in Type-Ii InAs∕GaAs Quantum Dots Covered by a GaAsSb Strain-Reducing Layer

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

Absence of Correlation Between Built-in Electric Dipole Moment and Quantum Stark Effect in Single InAs/GaAs Self-Assembled Quantum Dots

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Anisotropic Enhancement of Piezoelectricity in the Optical Properties of Laterally Coupled InAs/GaAs Self-Assembled Quantum Dots

In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

Electric field tunable exchange interaction in InAs/GaAs coupled quantum dots