Kenneth Wood,David Smith,Barbara Whitney,Keivan Stassun,Scott J. Kenyon,Michael J. Wolff,Karen S. Bjorkman
Abstract:Ground based imaging, imaging polarimetry, and recent Hubble Space Telescope WFPC2 and NICMOS images of protostars have revealed very complex scattered light patterns that cannot be entirely explained by 2-D radiation transfer models. We present here for the first time radiation transfer models of T Tau and IRAS 04016+2610 that are fully 3-D, with the aim of investigating the effects on image morphology of multiple illuminating sources and infalling envelopes that have been shaped by multiple outflows. For T Tau we have constructed scattered light models where the illumination of the surrounding envelope is by a binary with each source surrounded by its own small circumstellar disk or envelope. We find that the asymmetries in the WFPC2 image of T Tau can be reproduced if the disks in the binary system are misaligned, consistent with a recently discovered bipolar outflow believed to originate from the secondary. For IRAS 04016+2610 we find that the observed scattered light pattern can be reproduced by scattering in an envelope with cavities carved by two sets of bipolar outflows, suggestive of an embedded binary system.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **In the vertically - stacked InAs/GaAs self - assembled quantum dots (SADs) structure, due to the influence of the three - dimensional strain field distribution, its Quantum Confined Stark Effect (QCSE) shows a strong non - parabolic dependence, which is different from a single SAD structure and other types of quantum structures.**
Specifically, the paper explores the following points:
1. **Discovery of the abnormal Quantum Confined Stark Effect**:
- The vertically - stacked and coupled InAs/GaAs self - assembled quantum dot structures, under the action of an electric field, show a strong non - parabolic dependence, that is, the change of energy levels with the electric field is no longer a simple quadratic function relationship.
- This phenomenon has not been observed in a single SAD structure or other types of quantum structures.
2. **Theoretical explanation**:
- Through calculations using the eight - band stress - dependent \(k\cdot p\) Hamiltonian, the research found that this abnormal QCSE is caused by the three - dimensional strain field distribution, especially the significant impact on the hole states.
- The existence of the strain field changes the localization of the hole states in the stacked structure, thus leading to an increased sensitivity to the electric field.
3. **Experimental verification**:
- The paper verifies the existence of this abnormal QCSE through numerical simulation and theoretical calculation, and shows that it cannot be simply derived from the superposition of the electronic properties of a single SAD structure.
- The research also shows that in optoelectronic device applications, such as quantum dot lasers and other photonic devices, this effect can significantly modulate the inter - band transition energy through the electric field.
4. **Physical mechanism**:
- The paper analyzes in detail the distribution of the strain field, including hydrostatic strain and biaxial strain, and points out that biaxial strain plays a key role in the stacked structure.
- Biaxial strain forms two triangular confinement potential wells in the stacked structure, causing the energy of the hole states to change approximately linearly with the electric field, rather than parabolically.
5. **Mathematical model**:
- The paper gives a mathematical formula to describe this abnormal QCSE:
\[
E(F)=E(0)+pF + \beta F^{2}
\]
where \(p\) is the built - in dipole moment, and \(\beta\) measures the polarization of electron and hole states.
- For the stacked structure, the paper proposes two independent equations to describe the dependence of the transition energy on the electric field:
\[
E_{+}(F)=E(0)+p_{+}F+\beta_{+}F^{2}
\]
\[
E_{-}(F)=E'(0)+p_{-}F+\beta_{-}F^{2}
\]
where \(E'(0)\) is a fitting parameter, applicable to different electric field ranges respectively.
In conclusion, this paper aims to reveal the physical mechanism of the abnormal Quantum Confined Stark Effect in the vertically - stacked InAs/GaAs self - assembled quantum dot structure and its potential application value.