Abstract:We investigated the electronic and optical properties of self-assembled laterally double InAs/GaAs quantum dots coupled along the [110] and $[1\overline{1}0]$ directions with varying interdot distances. The coupling region provides a stronger confinement for both electrons and holes than in the center of each dot due to the weak compressive strain and positive biaxial strain in the region. The lateral coupling along the [110] $([1\overline{1}0])$ direction enhances the negative (positive) piezoelectric potential in the coupling region and lowers (raises) the potential in the middle of each dot. As a result, the piezoelectric potential decreases the splitting between the two transitions from the bonding $s$ orbitals to the two coupled $p$ orbitals in quantum dots coupled along the $[1\overline{1}0]$ direction and increases the splitting in the quantum dots coupled along the [110] direction. The direction of coupling is clearly distinguishable by the polarization of intraband transition since most transitions are polarized along the axis passing through the two dots. Lateral coupling enhances the polarization anisotropy of interband absorption spectra. In the presence of the piezoelectric potential, quantum dots coupled along the [110] direction exhibit larger redshift of the lowest exciton energies when the distance between the two dots is sufficiently close and have smaller exciton binding energies than quantum dots coupled along the $[1\overline{1}0]$ direction.

2D–3D transitions in the quantum Stark effect in self-assembled InAs/GaAs quantum dots

Anomalous Quantum-Confined Stark Effects in Stacked InAs/GaAs Self-Assembled Quantum Dots.

Scattered Light Models of Protostellar Envelopes: Multiple Outflow Cavities and Misaligned Circumstellar Disks

Anomalous Quantum-Confined Stark Effects in StackedInAs/GaAsSelf-Assembled Quantum Dots

Anomalous Quantum Confined Stark Effects In Vertically Coupled Inas/Gaas Self-Assembled Quantum Dots

Electronic Propertiesof InAs/GaAs Self‐assembled Quantum Dots: Beyond the Effective Mass Approximation

Asymmetric Stark shifts of exciton in InAsGaAs pyramidal quantum dots

Enhanced Intraband Transitions with Strong Electric Field Asymmetry in Stacked InAs/GaAs Self-Assembled Quantum Dots

Absence of Correlation Between Built-in Electric Dipole Moment and Quantum Stark Effect in Single InAs/GaAs Self-Assembled Quantum Dots

Interband Transition Distributions in the Optical Spectra of Inas/Gaas Self-Assembled Quantum Dots

Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

Electron-Hole Alignment in InAs/GaAs Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape

Electric field induced tuning of electronic correlation in weakly confining quantum dots

GaAs Cone-Shell Quantum Dots in a Lateral Electric Field: Exciton Stark-Shift, Lifetime, and Fine-Structure Splitting

Stark effect on the exciton spectra of vertically coupled quantum dots: horizontal field orientation and non-aligned dots

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Anisotropic Electron Spins in Self-Assembled Quantum Dots

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

Anisotropic Hole Spins in Single and Coupled Self-Assembled Quantum Dots

Anisotropic Enhancement of Piezoelectricity in the Optical Properties of Laterally Coupled InAs/GaAs Self-Assembled Quantum Dots

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study