Abstract:The electronic structures in the hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots are investigated theoretically in the framework of effective-mass envelope function theory. The electron and hole energy levels and optical transition energies are calculated. In our calculation, the effect of finite offset, valence-band mixing, the effects due to the different effective masses of electrons and holes in different regions, and the real quantum dot structures are all taken into account. The results show that (1) electronic energy levels decrease monotonically, and the energy difference between the energy levels increases as the GaAs quantum dot (QD) height increases; (2) strong state mixing is found between the different energy levels as the GaAs QD width changes; (3) the hole energy levels decrease more quickly than those of the electrons as the GaAs QD size increases; (4) in excited states, the hole energy levels are closer to each other than the electron ones; (5) the first heavy- and light-hole transition energies are very close. Our theoretical results agree well with the available experimental data. Our calculated results are useful for the application of the hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots to photoelectric devices.

Electron-Hole Alignment in InAs/GaAs Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Electron and hole effective masses in self-assembled quantum dots

Anisotropic Hole Spins in Single and Coupled Self-Assembled Quantum Dots

Anisotropic Electron Spins in Self-Assembled Quantum Dots

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Spontaneous Localization in InAs/GaAs Self-Assembled Quantum-Dot Molecules

Electronic Propertiesof InAs/GaAs Self‐assembled Quantum Dots: Beyond the Effective Mass Approximation

Landé g factors in elongated InAs/GaAs self-assembled quantum dots

Electronic structures of (In,Ga)As/GaAs quantum dot molecules made of dots with dissimilar sizes

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

2D–3D transitions in the quantum Stark effect in self-assembled InAs/GaAs quantum dots

Zero G Factors and Nonzero Orbital Momenta in Self-Assembled Quantum Dots

Electronic phase diagrams of carriers in self-assembled InAs/GaAs quantum dots: violation of Hund's rule and the Aufbau principle for holes

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

Effective-Mass Theory for Hierarchical Self-Assembly of Gaas/Alxga1-Xas Quantum Dots

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

Anomalous Quantum-Confined Stark Effects in StackedInAs/GaAsSelf-Assembled Quantum Dots

Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots