Abstract:The effects of inversion asymmetry on the anisotropic optical transition in the presence of electric field (Pockels effect) in GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As quantum wells and superlattices are investigated theoretically. Within an 8\ifmmode\times\else\texttimes\fi{}8 k\ensuremath{\cdot}p effective mass Hamiltonian formalism, in which the linear k, ${\mathit{k}}^{3}$, \ensuremath{\epsilon} (strain due to the piezoelectric effect), \ensuremath{\epsilon}k, and Rashba terms are taken into account, we have derived the renormalized effective Hamiltonian for the electron and hole, respectively. The effects of the inversion asymmetry and the hole mixing on the spin-split subband structures and the dependence of optical transition matrix elements on the polarization of incident light are fully presented. The microscopic model clearly shows that the inversion asymmetry is responsible for the Pockels effect. The roles played by the hole mixing in the enhanced quantum well Pockels effect mediated by the electron-hole pairs are shown by our calculations. Thus, we develop a theory with exciton states with eight spin components (due to the broken twofold degeneracy of the electrons) in the quantum well and calculate the excitonic spectra. The symmetry analysis and numerical results indicate that the excitonic anisotropic behavior results from the interference between different spin components of holes, which, owing to the heavy- and light-hole mixing, is enhanced significantly compared with the bulk material, especially for those exciton states whose dominant component does not coincide with its optically active component. Comparison between theory and experiment is discussed.

Electronic phase diagrams of carriers in self-assembled InAs/GaAs quantum dots: violation of Hund's rule and the Aufbau principle for holes

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Zero G Factors and Nonzero Orbital Momenta in Self-Assembled Quantum Dots

Electron-Hole Alignment in InAs/GaAs Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape

Hole transport in p-type GaAs quantum dots and point contacts

Anisotropic Hole Spins in Single and Coupled Self-Assembled Quantum Dots

Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots

Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

Valence Holes As Luttinger Spinor Based Qubits in Quantum Dots

Spontaneous Localization in InAs/GaAs Self-Assembled Quantum-Dot Molecules

Electronic structures of (In,Ga)As/GaAs quantum dot molecules made of dots with dissimilar sizes

Hole Spin Mixing in InAs Quantum Dot Molecules

Electron and hole effective masses in self-assembled quantum dots

Charging of a Single InAs QD with Electrically-Injected Holes using a Lateral Electric Field

Quantum-confinement-effect-driven Type-I–type-ii Transition in Inhomogeneous Quantum Dot Structures

Calculation of near-field scanning optical images of exciton, charged excition and multiexciton wavefunctions in self-assembled InAs/GaAs quantum dots

Electron and Hole G Tensors of Neutral and Charged Excitons in Single Quantum Dots by High-Resolution Photocurrent Spectroscopy

Interacting holes in gated WSe$_2$ quantum dots

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

Electrical Tuning of Exciton G Factors in Quantum Dot Molecules: Effect of Hole Localization

Interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields