Abstract:We present a novel "linear combination of atomic orbitals"-type of approximation, enabling accurate electronic structure calculations for systems of up to 20 or more electronically coupled quantum dots. Using realistic single quantum dot wavefunctions as basis to expand the eigenstates of the heterostructure, our method shows excellent agreement with full 8-band $\boldsymbol{k}\cdot\boldsymbol{p}$ calculations, exemplarily chosen for our benchmarking comparison, with an orders of magnitude reduction in computational time. We show that, in order to correctly predict the electronic properties of such stacks of coupled quantum dots, it is necessary to consider the strain distribution in the whole heterostructure. Edge effects determine the electronic structure for stacks of $\lesssim$ 10 QDs, after which a homogeneous confinement region develops in the center. The overarching goal of our investigations is to design a stack of vertically coupled quantum dots with an intra-band staircase potential suitable as active material for a quantum-dot-based quantum cascade laser. Following a parameter study in the In$_{x}$Ga$_{1-x}$As/GaAs material system, varying quantum dot size, material composition and inter-dot coupling strength, we show that an intra-band staircase potential of identical transitions can in principle be realized. A species library we generated for over 800 unique quantum dots provides easy access to the basis functions required for different realizations of heterostructures. In the associated manuscript entitled "Room Temperature Lasing of Terahertz Quantum Cascade Lasers Based on a Quantum Dot Superlattice", we investigate room temperature lasing of a terahertz quantum cascade laser based on a two-quantum-dot unit cell superlattice.

Electronic structures of (In,Ga)As/GaAs quantum dot molecules made of dots with dissimilar sizes

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Effective-Mass Theory for Hierarchical Self-Assembly of Gaas/Alxga1-Xas Quantum Dots

Electron-Hole Alignment in InAs/GaAs Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape

Intersubband Electronic Properties of InAs/GaAs Quantum Dot Molecules with Horizontal Spacer

Electronic and Optical Properties of Graphene Quantum Dots: the Role of Many-Body Effects

Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots

Spontaneous Localization in InAs/GaAs Self-Assembled Quantum-Dot Molecules

Electronic phase diagrams of carriers in self-assembled InAs/GaAs quantum dots: violation of Hund's rule and the Aufbau principle for holes

Incorporation of random alloy GaBi$_{x}$As$_{1-x}$ barriers in InAs quantum dot molecules: alloy strain and orbital effects towards enhanced tunneling

Efficient electronic structure calculations for extended systems of coupled quantum dots using a linear combination of quantum dot orbitals method

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Anisotropic Electron Spins in Self-Assembled Quantum Dots

Electron and hole effective masses in self-assembled quantum dots

Zero G Factors and Nonzero Orbital Momenta in Self-Assembled Quantum Dots

Electronic Propertiesof InAs/GaAs Self‐assembled Quantum Dots: Beyond the Effective Mass Approximation

Interband Transition Distributions in the Optical Spectra of Inas/Gaas Self-Assembled Quantum Dots

Hyperfine coupling of hole and nuclear spins in symmetric (111)-grown GaAs quantum dots

Anisotropic Hole Spins in Single and Coupled Self-Assembled Quantum Dots

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Electrical Tuning of Exciton G Factors in Quantum Dot Molecules: Effect of Hole Localization