Abstract:The Schrödinger equation, which describes the behaviour of an electron with a single dopant inside the system, has been constructed. It is composed of three InAs cubic quantum dots (CQDs) immersed in GaAs material under the influence of an electric field applied along the x-growth direction. The equation has been solved by the finite element method within effective mass approximation. Our investigation shows that in the absence of the electric field, the binding energy (BE) reaches its maximum value when the impurity is at the centre of the system, with two smaller peaks at the other quantum dots (QDs) and a minimum at the centre of the barriers. The BE changes considerably with the electric field, especially for large dots and barriers. Both the BE and the photoionization cross-section (PCS) can be tuned by adjusting the system's dimensions and the electric field. An increase in the dot width, barrier width along the x-axis, or the electric field results in a redshift of photoionization when the impurity is at the centre of the system. The amplitude of the PCS also changes significantly, becoming more pronounced as the dot width or electric field increases and exhibiting non-monotonic behaviour in the case of the barrier width.

Intersubband Electronic Properties of InAs/GaAs Quantum Dot Molecules with Horizontal Spacer

Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer

Experimental Observation of Electronic Coupling in GaAs Lateral Quantum Dot Molecules

Electronic structures of (In,Ga)As/GaAs quantum dot molecules made of dots with dissimilar sizes

Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

Photoluminescence of a single InAs quantum dot molecule under applied electric field

Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation

Widely Tunable Intersubband Energy Spacing of Self-Assembled Inas/Gaas Quantum Dots Due to Interface Intermixing

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Electronic Propertiesof InAs/GaAs Self‐assembled Quantum Dots: Beyond the Effective Mass Approximation

Interband Transition Distributions in the Optical Spectra of Inas/Gaas Self-Assembled Quantum Dots

Enhanced Intraband Transitions with Strong Electric Field Asymmetry in Stacked InAs/GaAs Self-Assembled Quantum Dots

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Observation of In‐plane Polarized Intersublevel Absorption in Strongly Coupled InGaAs/GaAs Self Assembled Quantum Dots

Observation of Intershell and Hybridized Energy States in InAs∕GaAs Quantum Dots

Finite element method simulation of electronic and optical properties in multi-InAs/GaAs quantum dots

InAs Quantum Dots for Quantum Information Processing