Abstract:Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic force microscopy (AFM) measurements showed that, compared to QDs grown on GaAs substrate, QDs grown on InGaAs layer has a significantly enhanced density. The short spacing (several nanometer) among QDs stimulates strong coupling and leads to a large red-shift of the 1.3 μm photoluminescence (PL) peak. We study systematically the dependence of PL lifetime on the QDs size, density and temperature (T). We found that, below 50 K, the PL lifetime is insensitive to temperature, which is interpreted from the localization effects. As T increases, the PL lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. The increase of carriers in QDs migrated from barriers and wetting layer (WL), and the redistribution of carriers among QDs enhance the PL lifetime as T increases. The thermal emission and non-radiative recombination have effects to reduce the PL lifetime at higher T. As a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in QDs, and QDs with different densities have different PL lifetime dependence on the QDs size.

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Optical and material characteristics of InAs/GaAs quantum dots

Temperature and Excitation Power Dependence of the Optical Properties of InAs Self-Assembled Quantum Dots Grown Between Two Al0.5Ga0.5As Confining Layers

Exciton Confinement in Strain-Engineered Metamorphic InAs/InxGa1-xAs Quantum Dots

Anomalous Temperature Dependence of Photoluminescence from InAs Quantum Dots

Morphological and optical characterization of self-assembled InAlGaAs/GaAs quantum dots

Widely Tunable Intersubband Energy Spacing of Self-Assembled Inas/Gaas Quantum Dots Due to Interface Intermixing

Time-resolved Photoluminescence Spectra of Self-Assembled InAs/GaAs Quantum Dots

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Optical And Electrical Investigation Of Low Dimensional Self-Assembled Inas Quantum Dot Field Effect Transistors

Emission Dynamics of Inas Self-Assembled Quantum Dots with Different Cap Layer Structures

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

X-ray Diffraction and Optical Characterization of Interdiffusion in Self-Assembled InAs/GaAs Quantum-Dot Superlattices

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

Temperature and Power-Density-dependent Inter-Shell Energy States in InAs/GaAs Quantum Dots

Structural and Photoluminescence Properties of In0.9(Ga/Al)0.1As Self-Assembled Quantum Dots on InP Substrate

Photoluminescence Properties of Self-Assembled Inas Quantum Dots Grown on Inp Substrates by Solid Source Molecular Beam Epitaxy

Exciton dynamics in self-organized InAs/GaAs quantum dots

Combined Optical And Electrical Studies Of The Effects Of Annealing On The Intrinsic States And Deep Levels In A Self-Assembled Inas Quantum-Dot Structure

Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer

Effect of an In-Situ Thermal Annealing on the Structural Properties of Self-Assembled Gasb/Gaas Quantum Dots