Abstract:This thesis describes an extensive study of the optical properties of In(Ga)As/Ga(Al)As quantum dots, both singularly and in laser devices. For the optical characterisation, the spectroscopic techniques of photoluminescence (PL), photoluminescence-excitation (PLE) and electroluminescence (EL) have been used. Additionally, for studying submicron structures, sophisticated micro-PL techniques allowed excitation, and detection, of a single quantum dot. A variety of special growth and fabrication techniques were used to isolate a single quantum dot from the rest of the ensemble. Firstly, a submicron mesa that isolated a single quantum dot was fabricated using e-beam lithography and dry etching techniques. Excitation intensity and wavelength dependence of the emission provided information about the nature of the exciton complexes in the dot and the absorption and relaxation of carriers in the structure. The linewidth of the single exciton, and the variation with temperature, was measured. Secondly, samples consisting of a single layer of InGaAs quantum dots incorporated within the intrinsic region of a GaAs/AlGaAs Metal-Insulator-Semiconductor type Schottky structure allowed sequential dot charging via variation of the gate bias. Both n- and p- type samples, grown under similar conditions, were investigated. Single quantum dots were probed through submicron apertures opened in the top metal contact using electron beam lithography and dry etching. The emission undergoes several pronounced changes as additional carriers are sequentially loaded into the dot. The results reveal direct information regarding Coulomb interaction and correlation effects in dots containing a controlled number of excess electrons (up to four) or holes (up to two). Magneto- optical results reveal further information about the few-particle wave functions. A detailed study of the device performance and physical processes in In(Ga)As- Ga(Al)As self-assembled quantum dot lasers showed that these lasers offer several potential advantages over conventional quantum well lasers including low threshold current density, temperature insensitive threshold current density and high differential gain. Device performance (threshold current density and its variation with temperature) has been studied as a function of a number of parameters, including dot density, dot composition and dot confinement potential. The application of large (<14T) magnetic fields has been used to study carrier transport and dot carrier capture effects. When applied along the growth axis, such fields result in an increase in the threshold current density and a decrease in the external quantum efficiency. These effects are attributed to inhibited inplane carrier transport resulting in an increase in the carrier capture efficiency by non-lasing dots. Spontaneously emitted light, recorded via small windows formed in the top metallic contact, has been studied as a function of injection current and temperature. Analysis of this data provides information on non-radiative loss mechanisms and dot carrier dynamics.

Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 um

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition

Probing the Dark-Exciton States of a Single Quantum Dot Using Photocurrent Spectroscopy in a Magnetic Field

Direct Observation of Excitonic Polaron in InAs/GaAs Quantum Dots

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Optical Transitions Of Positively Charged Excitons And Biexcitons In Single Inas Quantum Dots

Optical Transitions Inpbte∕cdtequantum Dots

Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots

Optical Studies of InAs Quantum Dots in III-V Semiconductors

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Optical Orientation of Excitons in a Longitudinal Magnetic Field in Indirect-Band-Gap (In,Al)As/AlAs Quantum Dots with Type-I Band Alignment

Optical characterisation of III-V semiconductor quantum dots and quantum dot structures

Electron and Hole G Tensors of Neutral and Charged Excitons in Single Quantum Dots by High-Resolution Photocurrent Spectroscopy

Coupling of the triplet states of a negatively charged exciton in a quantum dot with the spin of a magnetic atom

Precise Measurements of the Dipole Moment and Polarizability of the Neutral Exciton and Positive Trion in A Single Quantum Dot

Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 μm

Dynamics of excitons in individual InAs quantum dots revealed in four-wave mixing spectroscopy

Charging dynamics of single InAs quantum dots under both resonant and above-band excitation

Photovoltage and Photoreflectance Spectroscopy of Inas/Gaas Self-Organized Quantum Dots