Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition

N. I. Cade,H. Gotoh,H. Kamada,T. Tawara,T. Sogawa,H. Okamoto,H. Nakano

DOI: https://doi.org/10.1063/1.2093927

2005-05-30

Abstract:We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV, indicating strong confinement.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the luminescence characteristics of single InAs quantum dots (QDs) grown by metal - organic chemical vapor deposition (MOCVD) within the telecommunication wavelength window (around 1300 nm). Specifically, the researchers focus on the photoluminescence (PL) characteristics of these quantum dots at low temperatures, especially the formation and energy characteristics of neutral excitons, charged excitons, and biexciton states. In addition, the paper also explores the potential of these quantum dots as single - photon sources in telecommunication applications.

### Main research contents:
1. **Materials and structures**: The research object is self - organized InAs quantum dots grown in InGaAs quantum wells by the MOCVD method. This structure is called the "dot - in - well" (DWELL) heterostructure.
2. **Experimental methods**: Use low - temperature photoluminescence spectroscopy techniques to analyze the luminescence characteristics of quantum dots. The experimental temperature is maintained at 5K to reduce the influence of thermal effects.
3. **Observation results**:
- Obvious single - quantum - dot luminescence near 1300 nm was observed.
- The formation of neutral excitons, charged excitons, and biexciton states was clearly observed.
- The biexciton binding energy was measured to be 3.1 milli - electron volts (meV).
- It was found that the energy splitting between the s - shell and the p - shell is about 100 meV, indicating that the quantum dots have a strong confinement effect.
4. **Significance**:
- These findings are of great significance for the development of low - threshold lasers and non - classical light sources for quantum key distribution systems.
- The research results show that the quantum dots grown by MOCVD have good optical properties in the telecommunication wavelength range and can be used as efficient single - photon sources.

### Key conclusions:
- **Biexciton binding energy**: The measured biexciton binding energy is 3.1 meV, which is consistent with theoretical predictions and other experimental results.
- **Charged exciton binding energy**: The binding energy of the negative triplet (X - ) is 5.6 meV, and the binding energy of the positive triplet (X + ) is - 1.1 meV.
- **s - p shell splitting**: The energy splitting between the s - shell and the p - shell is about 100 meV, indicating that the quantum dots have a relatively strong confinement effect and a small size.

Through these studies, the paper provides important experimental data and theoretical support for understanding the optical characteristics of MOCVD - grown InAs quantum dots in the telecommunication wavelength range.