Abstract:Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross-section transmission electron microscopy reveals varying shapes and lateral sizes in the range ∼1-5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (E(b)xx) was found to vary from center to center, between 3 to -22 meV, in correlation with the exciton emission energy. Negative binding energies are only justified by a three-dimensional quantum confinement, which confirms QD-like properties of the localization centers. The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of E(b)xx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and E(b)xx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ∼3 nm for a QD with strongly negative E(b)xx = -15.5 meV.

Localized Excitons in Self-Assembled Inxga1-Xn Quantum Dots

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Exciton states in strained GaN/AlxGa1-xN quantum dots

Exciton states and interband optical transitions in InGaN quantum dots

Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots

Excitons and biexcitons in InGaN quantum dot like localization centers

Exciton States In Wurtzite Ingan Coupled Quantum Dots

Localized Exciton Dynamics in AlInGaN Alloy

Exciton States in Wurtzite Ingan Strained Coupled Quantum Dots: Effects of Piezoelectricity and Spontaneous Polarization

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots

Photovoltage and Photoreflectance Spectroscopy of Inas/Gaas Self-Organized Quantum Dots

Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition

Spontaneous Emission Mechanisms of Ga in As N ∕ Ga As Quantum Dot Systems

Spontaneous Localization in InAs/GaAs Self-Assembled Quantum-Dot Molecules

Quasi-bound states and continuum absorption background of polar Al0.5Ga0.5N/GaN quantum dots

Tuning The Exciton G Factor In Single Inas/Inp Quantum Dots

Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

A Theoretical Study of Structural Disorder and Photoluminescence Linewidth in InGaAs/GaAs Self Assembled Quantum Dots