Abstract:We present an eight-band k.p model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InGaN) QDs formed by composition fluctuations in InGaN layers. The eight-band k.p model accounts for strain effects, piezoelectric and pyroelectricity, spin-orbit and crystal field splitting. Exciton binding energies are calculated using the self-consistent Hartree method. Using this model, we studied the electronic properties of InGaN QDs and their dependence on structural properties, i.e., their chemical composition, height, and lateral diameter. We found a dominant influence of the built-in piezoelectric and pyroelectric fields, causing a spatial separation of the bound electron and hole states and a redshift of the exciton transition energies. The single-particle energies as well as the exciton energies depend heavily on the composition and geometry of the QDs.
What problem does this paper attempt to address?
### What problems does this paper attempt to solve?
This paper aims to explore the interrelationship between the structure and electronic properties of indium gallium nitride (InₓGa₁₋ₓN) quantum dots (QDs), especially by using the eight - band k·p model to calculate the electronic structure of these quantum dots. Specifically, the study focuses on the following aspects:
1. **Understanding physical phenomena in nanostructures**: Through theoretical calculations, researchers hope to gain in - depth understanding of the physical properties of nanostructures (such as quantum dots) based on the InₓGa₁₋ₓN material system, especially in terms of optics and electronics.
2. **Interpreting experimental phenomena**: In recent years, experimental studies have revealed that zero - dimensional localization centers formed by indium concentration fluctuations in InₓGa₁₋ₓN layers emit light similar to that of quantum dots. However, the electronic and optical properties of these localization centers are still unclear, especially the interaction between their structural properties and electronic properties has not been experimentally proven. Therefore, this paper hopes to fill this gap through theoretical calculations.
3. **Evaluating the influence of different factors**: Researchers pay special attention to the influence of the built - in piezoelectric and pyroelectric fields on the electronic states of quantum dots, because these effects play an important role in hexagonal nitride - based nanostructures. In addition, how single - particle energy and exciton energy depend on the composition and geometry of quantum dots (such as chemical composition, height, and lateral diameter) is also investigated.
4. **Improving theoretical models**: Another goal is to provide a comprehensive overview of theoretical models and briefly compare the k·p methods used in other published literatures. This helps to evaluate the importance of spin - orbit interaction and conduction band/valence band coupling in InₓGa₁₋ₓN/GaN quantum dots.
### Specific content of the research
To achieve the above goals, researchers have taken the following steps:
- **Establishing an eight - band k·p model**: This model takes into account strain effects, piezoelectric and pyroelectric polarization, spin - orbit splitting, and crystal - field splitting, and uses the complete 8x8 Hamiltonian to describe the coupling between the valence band and the conduction band.
- **Calculating strain and built - in electric fields**: Correctly describing the strain field inside and near the quantum dot is crucial for accurately describing its electronic properties. The strain field not only directly affects the band offset but also indirectly causes piezoelectric polarization.
- **Calculating exciton binding energy**: The self - consistent Hartree method is used to calculate the exciton binding energy to consider multi - particle effects, such as direct Coulomb interaction, exchange, and correlation effects.
- **Analyzing the influence of different parameters**: By changing the lateral diameter, height, and maximum indium concentration of quantum dots, the influence of these structural parameters on single - particle states and exciton states is studied.
In summary, through theoretical calculations, this paper explores in detail the electronic and optical properties of InₓGa₁₋ₓN/GaN quantum dots and reveals the complex relationships between these properties and the structural parameters of quantum dots.