Abstract:I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. For the InAs/GaAs system we present single-dot photoluminescence spectra for different excitation power densities and temperatures. These spectra show level splitting due to few-particle effects. We also present calculations including both direct and exchange interaction for systems up to three excitons in the dot. We were able to assign different emission lines to transitions between different multiple exciton states. A rate equation model was developed which allows simulations of the peak intensities with excitation power density to be made and compared with experimental results. The InAs/InP system was investigated using PL spectroscopy, JSCT, and PC measurements. In contrast to other systems the holes were found to be more strongly confined than the electrons. We have also performed photoluminescence measurements revealing excited states in good agreement with theory. For both systems we studied the possibility to manipulate the positioning and size of the QDs. The growth results were investigated using atomic force microscopy (AFM) and PL measurements (Less)

Exciton states and interband optical transitions in InGaN quantum dots

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots

Exciton States in Wurtzite Ingan Strained Coupled Quantum Dots: Effects of Piezoelectricity and Spontaneous Polarization

Exciton States In Wurtzite Ingan Coupled Quantum Dots

Exciton states in strained GaN/AlxGa1-xN quantum dots

Tuning Quantum Dot States with Optical Fields

Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures: Effects of hydrostatic pressure

Donor Bound Excitons Confined in Wurtzite Ingan/Gan Quantum Dot Nanowire Heterostructures

Localized Excitons in Self-Assembled Inxga1-Xn Quantum Dots

Built-In Electric Field Effects on Donor Bound Excitons in Wurtzite Ingan Strained Coupled Quantum Dots

Exciton States in Wurtzite InGaN/GaN Quantum Wells: Strong Built-in Electric Field and Interface Optical-Phonon Effects

Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model

Influence of Pressure on Exciton States and Interband Optical Transitions in Wurtzite Ingan/Gan Coupled Quantum Dot Nanowire Heterostructures with Polarization and Dielectric Mismatch

Influence of pressure on donor bound exciton states in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Excitons in quantum-dot quantum-well nanoparticles

Optical Studies of InAs Quantum Dots in III-V Semiconductors

Electronic and Optical Properties of Graphene Quantum Dots: the Role of Many-Body Effects

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime