Abstract:Strained epitaxy has been shown to produce pyramidal-shaped semiconductor dot structures by single-step epitaxy. The very high density of these dots (approaching per wafer) and their ever improving uniformity suggest that these features could have important applications in future microelectronics. Understanding the structural and electronic properties of these quantum dots is therefore of great importance. In this paper, we examine some of the physics controlling the performance of devices that could be made from such structures. The self-assembled quantum dots are highly strained and we will examine the strain tensor in these quantum dots using a valence force-field model. In this paper we will address the following issues: (1) What is the general nature of the strain tensor in self assembled quantum dots? (2) What are the electron and hole spectra for InAs-GaAs quantum dots? (a) What are the important intersubband radiative and nonradiative scattering processes in the self assembled quantum dots? In particular, we will discuss how the electron-phonon interactions are modified in the quantum dot structures. Consequences for uncooled intersubband devices such as lasers, detectors, and quantum transistors will be briefly discussed.

Strain Distribution And Electronic Spectra Of Inas/Gaas Self-Assembled Dots: An Eight-Band Study

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

Conduction Band Spectra in Self-Assembled Inas/Gaas Dots: A Comparison of Effective Mass and an Eight-Band Approach

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Theory of strain tunning exction coupling in self-assembled InAs/GaAs quantum dots

Electronic Propertiesof InAs/GaAs Self‐assembled Quantum Dots: Beyond the Effective Mass Approximation

Interband Transition Distributions in the Optical Spectra of Inas/Gaas Self-Assembled Quantum Dots

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots

A Theoretical Study of Structural Disorder and Photoluminescence Linewidth in InGaAs/GaAs Self Assembled Quantum Dots

Effect of Thin Gaas Tensile-Strained Layer on Inas Quantum Dots on Inp (001) Substrate Grown by Lp-Movpe

Atomistic theory of electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substrates

Impact Of The Cap Layer On The Electronic Structures And Optical Properties Of Self-Assembled Inas/Gaas Quantum Dots

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Anisotropic Electron Spins in Self-Assembled Quantum Dots

Electron-Hole Alignment in InAs/GaAs Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape

Modeling a Strain and Piezo Potentials in an InAs/GaAs Quantum Dot