Abstract:Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively reproduced, and the correct energy states are identified based on a previously validated atomistic tight binding model. The extended devices are represented explicitly in space with 15 million atom structures. An excited state spectroscopy technique is presented in which the externally applied electric field is swept to probe the ladder of the electronic energy levels (electron or hole) of one quantum dot through anti-crossings with the energy levels of the other quantum dot in a two quantum dot molecule. This technique can be applied to estimate the spatial electron-hole spacing inside the quantum dot molecule as well as to reverse engineer quantum dot geometry parameters such as the quantum dot separation. Crystal deformation induced piezoelectric effects have been discussed in the literature as minor perturbations lifting degeneracies of the electron excited (P and D) states, thus affecting polarization alignment of wave function lobes for III-V Heterostructures such as single InAs/GaAs quantum dots. In contrast this work demonstrates the crucial importance of piezoelectricity to resolve the symmetries and energies of the excited states through matching the experimentally measured spectrum in an InGaAs quantum dot molecule under the influence of an electric field. Both linear and quadratic piezoelectric effects are studied for the first time for a quantum dot molecule and demonstrated to be indeed important. The net piezoelectric contribution is found to be critical in determining the correct energy spectrum, which is in contrast to recent studies reporting vanishing net piezoelectric contributions.

Modeling a Strain and Piezo Potentials in an InAs/GaAs Quantum Dot

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Finite element method simulation of electronic and optical properties in multi-InAs/GaAs quantum dots

Theory of strain tunning exction coupling in self-assembled InAs/GaAs quantum dots

Piezoelectric Effects and Electronic Structures of InAs/GaAs Quantum Dots Grown along (111) and (011) Directions

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Theoretical Study of Quantum Confined Stark Shift in Inas/Gaas Quantum Dots

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

Electronic Structure of Quantum Dots in (111) Direction

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

A General Perturbation Method for Inhomogeneities in Anisotropic and Piezoelectric Solids with Applications to Quantum-Dot Nanostructures

Strain accumulation in InAs/In x Ga 1− x As quantum dots

Strain Effects on Resonant Parameters in Asymmetric In1−xGaxAs Quantum Dot Molecules

Strain-induced Electronic Energy Changes in Multilayered InGaAs∕GaAs Quantum Wire Structures

Influences of Strain on Binding Energies of Excitons in InAs/GaAs Quantum Dot Molecules

Strain Distribution And Electronic Spectra Of Inas/Gaas Self-Assembled Dots: An Eight-Band Study

Strain Distribution and Electronic Structures of the InAs/GaAs Quantum Ring Molecule in an Applied Electric Field

Electronic Propertiesof InAs/GaAs Self‐assembled Quantum Dots: Beyond the Effective Mass Approximation