Abstract:III-V Semiconductor quantum dots (QDs) grown with growth interruption technique do not have uniform group III composition inside the dot. Modelling such as-grown structures requires in-depth knowledge of the composition and potential well profile. In this work, we have developed a three-dimensional analytical model which incorporates strain, as well as the variation of group III composition profile in both lateral and vertical directions inside an as-grown QD in order to quantify the effect of dot size variation on the interband optical absorption spectra of as-grown QD systems. Earlier reports on this subject considered the variation of either the dot height or base to account for the size deviation, which may not be sufficient enough to predict the dot size distribution in realistic systems, where all dimensions are likely to suffer from deviation. Keeping this in mind, Gaussian distribution of dot volume has been adopted here to consider the variations of height and base of QDs in a cumulative way. In our study, we considered InGaAs/GaAs and InGaN/GaN QD systems. The non-uniform distribution of indium inside the as-grown dot leads to a non-rectangular potential well profile, which eventually transforms into a rectangular one after annealing. Through the proposed model, we have investigated the effect of inhomogeneous indium composition and dot size variation on the optical absorption spectra of InGaAs/GaAs and InGaN/GaN as-grown QD systems through Gaussian distribution of dot volume. We have also discussed the effect of size deviation on the full width at half maxima (FWHM) of both as-grown and annealed QD systems. Emphasis has been given to the changes in the conduction and valence band potential profiles due to changes in the morphology inside the dot leading to subsequent changes in the energy levels caused by composition uniformity due to annealing and interdiffusion, thus modifying the nature of absorption spectra.

Statistical model of electronic structure in InAs, InP, GaSb, and Si quantum dots with surface roughness

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

Modeling a Strain and Piezo Potentials in an InAs/GaAs Quantum Dot

Electron energy spectrum of the spherical GaAs/Al$_x$Ga$_{1-x}$As quantum dot with several impurities on the surface

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Modelling of Quantum Dots with the Finite Element Method

Interdiffusion Induced Changes in the Absorption Spectra of III-V Quantum Dot Systems

Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

Finite element method simulation of electronic and optical properties in multi-InAs/GaAs quantum dots

Effects of elastic heterogeneity and anisotropy on the morphology of self-assembled epitaxial quantum dots

Quantum Dot Properties in the Multiband Envelope-Function Approximation Using Boundary Conditions Based Upon First-Principles Quantum Calculations

The theoretical DFT study of electronic structure of thin Si/SiO2 quantum nanodots and nanowires

Numerical study of Valence Band states evolution in AlGaAs [111] QDs systems

Electronic states and curved surface effect of silicon quantum dots

Atomistic theory of electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substrates

A Comprehensive Ab Initio Study of Electronic, Optical and Cohesive Properties of Silicon Quantum Dots of Various Morphologies and Sizes up to Infinity

The Optical Band Gap of Silicon Quantum Dots: The Influence of Surface Passivation

Electron-interface Phonon Scattering in GaAs/Ga1-xAlxAs Quantum-Well Structures with Interface Roughness

Electronic Structure of Quantum Dots in (111) Direction

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots