Electron-interface Phonon Scattering in GaAs/Ga1-xAlxAs Quantum-Well Structures with Interface Roughness

WH DUAN,JL ZHU,BL GU
DOI: https://doi.org/10.1088/0953-8984/5/18/007
1993-01-01
Journal of Physics Condensed Matter
Abstract:Considering the influence of interface roughness on phonon vibrational modes in the dielectric continuum model, electron-interface phonon scattering rates are calculated in a model GaAs/Ga1-xAlxAs quantum-well structure. The intrasubband and intersubband scattering rates are given as a function of quantum-well width. It is shown that interface phonon scattering is the dominant scattering mechanism in narrow quantum-well structures and electron relaxation is strongly dependent on interface roughness. For intersubband scattering, the infinite barrier height approximation can introduce a large error, in particular, in narrow quantum-well structures. The authors' results are in good agreement with recent experimental data.
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