Abstract:The equation of motion for the p-polarization field ina wurtzite GaN/AlN multilayer heterostructure is solved for thequasi-confined-optical-phonon modes based on thedielectric-continuum model and Loudon’s uniaxial crystal model.The polarization eigenvector, the dispersion relation of thequasi-confined-optical-phonon modes and theelectron-quasi-confined-phonon interaction Fröhlich-likeHamiltonian are derived. The analytical formulas can be directlyapplied to single/multiple quantum wells (QW’s) and superlattices.The electron-quasi-confined-phonon coupling functions areinvestigated for a given AlN/GaN/AlN single QW with full accountof the strains of the QW structures and the anisotropy effect ofwurtzite crystals. We find that there are two kinds ofquasi-confined-optical-phonon modes in the GaN/AlN QW’s: theGaN-layer quasi-confined-optical-phonon modes and the AlN-layerquasi-confined-optical-phonon modes. There are infinitequasi-confined-optical-phonon branches, labelled by a quantumnumber n (n=1,2,...), with definite symmetry with respectto the center of the AlN/GaN/AlN single QW for a given phonon wavenumber q. The dispersions of thequasi-confined-optical-phonon modes with smaller n are moreobvious than the ones with larger n. Moreover, the modes withsmaller n are much more important for theirelectron-quasi-confined-phonon interactions than those with largern. In most cases, it is enough to consider the modes with n≤8 for the electron-quasi-confined-phonon interactions in a singleGaN/AlN QW. The higher frequency modes are more significant thanthe lower ones. The long-wavelength quasi-confined-optical-phononmodes are much more important for theelectron-quasi-confined-phonon interactions. The GaN-layerquasi-confined-optical-phonon energies and theirelectron-quasi-confined-phonon interaction strength are markedlyincreased due to the strains of the QW structures. The influenceof the strains on the the AlN-layer electron-quasi-confined-phononinteractions can be ignored.

Intrasubband electron-phonon scattering in doped thin-layer inserted quantum well

Electric-Field-Dependent Intersubband Transition Via Optical Phonons In A Doped-Thin-Layer Inserted Quantum-Well Structure

Electron–optical–phonon Scattering in Non-Square Quantum-Well Structures

Electron-phonon Scattering Inga1−xal

Effect of an Electric Field on Electron-Interface-Phonon Scattering in A Graded Quantum Well

Electron-interface Phonon Scattering in GaAs/Ga1-xAlxAs Quantum-Well Structures with Interface Roughness

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Optical Interface Phonon in Thin Layer Inserted Quantum Well Structure

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

The Effect of Transverse Electric Field on the Electron-Optical-Phonon Scattering Rates in Quantum Wires

Optical Interface Phonon in Graded Quantum Well Structures

Theory on the Optical-Phonon Raman Scattering in GaAs/AlAs Heterostructures

Optical-phonon Modes and Electron-Optical-phonon Interaction in a Coupled Quantum Well

Electron Quasi-Confined-Optical-Phonon Interactions in Wurtzite Gan/Aln Quantum Wells

Dispersions of Quasi-Confined Optical Phonon Modes and Their Electron–phonon Interactions in an Asymmetric Wurtzite AlxGa1−xN / GaN / Aly Ga1−yN Quantum Well

Interaction Between an Electron and Optical Phonons in Polar Semiconductor Heterostructures

Theory of coherent acoustic phonons in InGaN/GaN multi-quantum wells

SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD

Vibration Spectra of Quasi-confined Optical Phonon Modes in an Asymmetric Wurtzite Al X Ga 1− X N/GaN/Al Y Ga 1− Y N Quantum Well

Optical-Phonon Modes and Electron-Phonon Interaction in Arbitrary Semiconductor Planar Microcavities

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells