Abstract:The equation of motion for the p-polarization field ina wurtzite GaN/AlN multilayer heterostructure is solved for thequasi-confined-optical-phonon modes based on thedielectric-continuum model and Loudon’s uniaxial crystal model.The polarization eigenvector, the dispersion relation of thequasi-confined-optical-phonon modes and theelectron-quasi-confined-phonon interaction Fröhlich-likeHamiltonian are derived. The analytical formulas can be directlyapplied to single/multiple quantum wells (QW’s) and superlattices.The electron-quasi-confined-phonon coupling functions areinvestigated for a given AlN/GaN/AlN single QW with full accountof the strains of the QW structures and the anisotropy effect ofwurtzite crystals. We find that there are two kinds ofquasi-confined-optical-phonon modes in the GaN/AlN QW’s: theGaN-layer quasi-confined-optical-phonon modes and the AlN-layerquasi-confined-optical-phonon modes. There are infinitequasi-confined-optical-phonon branches, labelled by a quantumnumber n (n=1,2,...), with definite symmetry with respectto the center of the AlN/GaN/AlN single QW for a given phonon wavenumber q. The dispersions of thequasi-confined-optical-phonon modes with smaller n are moreobvious than the ones with larger n. Moreover, the modes withsmaller n are much more important for theirelectron-quasi-confined-phonon interactions than those with largern. In most cases, it is enough to consider the modes with n≤8 for the electron-quasi-confined-phonon interactions in a singleGaN/AlN QW. The higher frequency modes are more significant thanthe lower ones. The long-wavelength quasi-confined-optical-phononmodes are much more important for theelectron-quasi-confined-phonon interactions. The GaN-layerquasi-confined-optical-phonon energies and theirelectron-quasi-confined-phonon interaction strength are markedlyincreased due to the strains of the QW structures. The influenceof the strains on the the AlN-layer electron-quasi-confined-phononinteractions can be ignored.

Optical Interface Phonon in Thin Layer Inserted Quantum Well Structure

Optical Interface Phonon in Graded Quantum Well Structures

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Electric-Field-Dependent Intersubband Transition Via Optical Phonons In A Doped-Thin-Layer Inserted Quantum-Well Structure

Intrasubband electron-phonon scattering in doped thin-layer inserted quantum well

Polar Interface Optical Phonon Modes and Fröhlich Electron-Phonon Interaction Hamiltonians in an Arbitrary Layer-Number Quantum Well System

Polar Oscillation of Interface and Surface Optical Phonons in Free-Standing Cylindrical Quantum-Well Wires

Full Optical Phonon States and Their Dispersive Spectra of a Wurtzite GaN/AlGaN Superlattice: Quantum Size Effect

Chemical composition fluctuations at interfaces in quantum well structures: effect on interface phonon modes

Localized Interface Optical Phonon Modes in A Semi-Infinite Superlattice with A Cap Layer

Size and dielectric dependence of interface and surface optical phonons spectra in wurtzite GaN/AlN quantum well wires

Fröhlich Electron-Interface Optical Phonon Interactions in N-Layer Low-dimensional Coupling Quantum Structures

Dispersions of Quasi-Confined Optical Phonon Modes and Their Electron–phonon Interactions in an Asymmetric Wurtzite AlxGa1−xN / GaN / Aly Ga1−yN Quantum Well

Fröhlich Electron-Interface Optical Phonon Interactions in <i>n</i>-Layer Low-dimensional Coupling Quantum Structures

Electron Quasi-Confined-Optical-Phonon Interactions in Wurtzite Gan/Aln Quantum Wells

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Polar interface optical phonon modes and Fröhlich electron–phonon interaction Hamiltonians in wurtzite quantum well wires

Confinement of Polar Optical Phonons in Quasi-One-dimensional Wurtzite GaN-based Quantum Well Wires: Propagating and Half-Space Phonon Modes

Interaction Between an Electron and Optical Phonons in Polar Semiconductor Heterostructures

Electron-interface Phonon Scattering in GaAs/Ga1-xAlxAs Quantum-Well Structures with Interface Roughness

Optical-Phonon Modes and Electron-Phonon Interaction in Arbitrary Semiconductor Planar Microcavities