Abstract:Interface phonons and bulk-like longitudinal-optical (LO) phonons and their interaction with an electron are studied for a finite four-layer heterostructure (FFLHS). An analysis of the field eigenvectors shows that, in the vicinity of the Brillouin-zone center, an interface transverse-optical (TO) mode oscillates at the bulk LO frequency, and an interface LO mode oscillates at the bulk TO frequency. Analytic expressions and numerical illustrations for dispersion relations of interface modes and for electron-phonon coupling functions and scattering rates are obtained for finite, semi-infinite and infinite quantum well (QW) structures which are important special cases of an FFLHS. It is shown that the scattering rates depend strongly on the well width of a QW structure, and that interface modes are much more important than bulk LO modes when the well width is small. The calculated results also show that the usual selection rules for intersubband and intrasubband transitions break down in asymmetric heterostructures. Moreover, we have found an interesting result. That is, in comparison with the negligibly small interaction between an electron and the lowest-frequency interface-mode in symmetric single QWs and commonly used step QWs, this interaction may be very large in asymmetric single QWs and general step QWs.

Electric-Field-Dependent Intersubband Transition Via Optical Phonons In A Doped-Thin-Layer Inserted Quantum-Well Structure

Intrasubband electron-phonon scattering in doped thin-layer inserted quantum well

Electron-phonon Scattering Inga1−xal

Effect of an Electric Field on Electron-Interface-Phonon Scattering in A Graded Quantum Well

Electron–optical–phonon Scattering in Non-Square Quantum-Well Structures

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Phonon Assisted Intersubband Transitions in Step Quantum Well Structures

Optical Interface Phonon in Thin Layer Inserted Quantum Well Structure

The Effect of Transverse Electric Field on the Electron-Optical-Phonon Scattering Rates in Quantum Wires

Suppression of Intersubband Transition by Applied Electrical Fields in AlN/GaN Coupled Double Quantum Wells

Optical Interface Phonon in Graded Quantum Well Structures

Analysis of the Scattering of Electrons by Special Vibrational Modes in A Gaas Quantum Well with A Thin Alas Middle Barrier: Mobility Modulated by A Transversal Electric Field

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Interaction Between an Electron and Optical Phonons in Polar Semiconductor Heterostructures

Intersubband Transition in Symmetric AlxGa1 − Xn/gan Double Quantum Wells with Applied Electric Field

Optical-phonon Modes and Electron-Optical-phonon Interaction in a Coupled Quantum Well

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Linear and Nonlinear Intersubband Optical Properties in A Step Quantum Well with an Applied Electric Field

SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD

Subband structures and intersubband optical transitions in lateral surface superlattices under electric fields

Intersubband optical absorption of electrons in double parabolic quantum wells of Al x Ga 1− x As/Al y Ga 1− y As