Abstract:In this research, a laser-dressed double GaAsSb/GaAs parabolic quantum well was modeled to explore the intra/valence-band transition-dependent optoelectronic features considering the effects of the geometry of the well and antimony content. The laser-dressed electronic characteristics were investigated by solving the Schrödinger equation within the framework of the effective mass for a variable masse versus the geometry of the confinement potential. The calculations were based on the Floquet technique and Kramers-Henneberger transformation using the finite element method. The linear and the third-order nonlinear optical absorption coefficients and refractive index changes were examined using the density matrix method through an iterative procedure. The laser field dependence exhibited a transition from a double confinement profile to a triple one along with an enhancement in the number of the electronic bound states. In the pursuit of laser studies, a split was detected in doubly degenerated energy states, leading to a blueshift along with an attenuated resonance in the intra/valence-band optical transitions with incrementing the laser-dressing effects. The optoelectronic features of the laser-dressed quantum well exhibited a complicated behavior under varying half-width of the well and the antimony content. Interestingly, the effect of the geometry of the well was more pronounced than the antimony content.

Linear and Nonlinear Intersubband Optical Properties in A Step Quantum Well with an Applied Electric Field

Double-Resonance Enhanced Intersubband Second-Order Nonlinear Optical Susceptibilities in Gan/Algan Step Quantum Wells

Nonlinear Refractive Index Change And Optical Rectification In A Gan-Based Step Quantum Wells With Strong Built-In Electric Field

Linear and Nonlinear Intersubband Optical Absorption in A Strained Double Barrier Quantum Well

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Intersubband optical absorptions of a GaN-based step quantum well with built-in electric field

Calculation Of Linear And Nonlinear Intersubband Refractive-Index Changes In An Asymmetrical Semiparabolic Quantum Well With Applied Electric Field

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

The intra/valence-band linear and third-order nonlinear optical properties of a laser-dressed double GaAsSb/GaAs parabolic quantum well: the effect of the geometry of the well and antimony content

Intersubband Transition in Symmetric AlxGa1 − Xn/gan Double Quantum Wells with Applied Electric Field

Linear and Nonlinear Intersubband Optical Absorptions and Refractive Index Changes in InGaN Strained Single Quantum Wells： Strong Built-in Electric Field Effects

Electric Field Effect on the Linear and Nonlinear Intersubband Refractive Index Changes in Asymmetrical Semiparabolic and Symmetrical Parabolic Quantum Wells

Effect of Conduction Band Non-Parabolicity on the Nonlinear Optical Properties in GaAs/Ga1−xAlxAs Double Semi-V-shaped Quantum Wells

Second-Order Nonlinear Optical Susceptibilities Induced by Built-In Electric Field in Wurtzite Nitride Double Quantum Wells

Influence Of Polarization-Induced Electric Field On The Wavelength And The Absorption Coefficient Of The Intersubband Transitions In Alxga1-Xn/Gan Double Quantum Wells

Self-consistent Simulation of Stark Shift of Intersubband Transition in Modulation-Doped Step Quantum Wells

Suppression of Intersubband Transition by Applied Electrical Fields in AlN/GaN Coupled Double Quantum Wells

Spin Splitting of Conduction Subbands in Al0.3ga0.7as/Gaas/Alxga1-X As/Al0.3ga0.7as Step Quantum Wells

Studies on Linear and Nonlinear Intersubband Optical Absorptions in A Wurtzite Algan/Gan Coupling Quantum Well

Electric Field Effect on the Second-Order Nonlinear Optical Properties of Parabolic and Semiparabolic Quantum Wells

Influence Of Width Of Left Well On Intersubband Transitions In Alxga1-Xn/Gan Double Quantum Wells