Abstract:Based on the density matrix method and the iterative treatment, the second-harmonic generation (SHG) susceptibility of a wurtzite nitride coupling quantum well (CQW) with strong built-in electric fields have been theoretically investigated. The effect of the band non-parabolicity effect has been taken into account. A typical wurtzite GaN/InxGa1–xN CQW are chosen to perform numerical calculations. The localized properties of the electronic ground state and the low-excited states in the system are analyzed in detail. The calculated SHG coefficients reach the order of magnitude of 10−7m/V, which is two-order larger than the corresponding values in wurtzite single quantum wells. Moreover, it is confirmed that the SHG coefficients are not monotonic functions of the well width, barrier width and the doped concentration of the CQW systems, but have complicated dependent relations on them. The reasons resulting in these characteristics can be attributed to the intense competition between the strong built-in electric field effect and the quantum size effect for the electronic confined situation in the wurtzite CQWs. The calculated results also show that a strong SHG effect can be realized in the nitride CQW by choosing a group of optimized structural parameters and doped fraction.

Nonlinear Refractive Index Change And Optical Rectification In A Gan-Based Step Quantum Wells With Strong Built-In Electric Field

Intersubband optical absorptions of a GaN-based step quantum well with built-in electric field

Linear and Nonlinear Intersubband Refractive Index Changes in Wurtzite Algan/Gan Double Quantum Wells: Effects of Piezoelectricity and Spontaneous Polarization

NONLINEAR OPTICAL RECTIFICATION OF A COUPLING WURTZITE GaN-BASED QUANTUM WELL WITH BUILT-IN ELECTRIC FIELDS

Calculation Of Linear And Nonlinear Intersubband Refractive-Index Changes In An Asymmetrical Semiparabolic Quantum Well With Applied Electric Field

Linear and Nonlinear Intersubband Optical Absorptions and Refractive Index Changes in InGaN Strained Single Quantum Wells： Strong Built-in Electric Field Effects

Electric Field Effect on the Linear and Nonlinear Intersubband Refractive Index Changes in Asymmetrical Semiparabolic and Symmetrical Parabolic Quantum Wells

Interface optical phonon-assisted scattering rates in wurtzite nitride step quantum wells with strong built-in electric field

Linear and Nonlinear Intersubband Optical Properties in A Step Quantum Well with an Applied Electric Field

Double-Resonance Enhanced Intersubband Second-Order Nonlinear Optical Susceptibilities in Gan/Algan Step Quantum Wells

Analysis of Photon-Induced Refractive Index Change Based on GaAs/AlGaAs Quantum Wells Materials

Built-in Electric Field Effect on the Linear and Nonlinear Intersubband Optical Absorptions in InGaN Strained Single Quantum Wells

The Optical Kerr Effect in Wurtzite Gan-Based Double Quantum Wells: Influences of Piezoelectricity and Spontaneous Polarization

Linear Electro-Optic Effect Due to the Built-in Electric Field in InGaN/GaN Quantum Wells

Studies on Linear and Nonlinear Intersubband Optical Absorptions in A Wurtzite Algan/Gan Coupling Quantum Well

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Enhancement of optical rectification in coupled quantum wells

Second-Order Nonlinear Optical Susceptibilities Induced by Built-In Electric Field in Wurtzite Nitride Double Quantum Wells

Analysis of Optical Gain Property in the Ingan/Gan Triangular Shaped Quantum Well under the Piezoelectric Field

Influence of Polarization Induced Electric Fields on the Wavelength and the Refractive Index of Intersubband Transitions in AlN/GaN Coupled Double Quantum Wells

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells