Abstract:The equation of motion for the p-polarization field ina wurtzite GaN/AlN multilayer heterostructure is solved for thequasi-confined-optical-phonon modes based on thedielectric-continuum model and Loudon’s uniaxial crystal model.The polarization eigenvector, the dispersion relation of thequasi-confined-optical-phonon modes and theelectron-quasi-confined-phonon interaction Fröhlich-likeHamiltonian are derived. The analytical formulas can be directlyapplied to single/multiple quantum wells (QW’s) and superlattices.The electron-quasi-confined-phonon coupling functions areinvestigated for a given AlN/GaN/AlN single QW with full accountof the strains of the QW structures and the anisotropy effect ofwurtzite crystals. We find that there are two kinds ofquasi-confined-optical-phonon modes in the GaN/AlN QW’s: theGaN-layer quasi-confined-optical-phonon modes and the AlN-layerquasi-confined-optical-phonon modes. There are infinitequasi-confined-optical-phonon branches, labelled by a quantumnumber n (n=1,2,...), with definite symmetry with respectto the center of the AlN/GaN/AlN single QW for a given phonon wavenumber q. The dispersions of thequasi-confined-optical-phonon modes with smaller n are moreobvious than the ones with larger n. Moreover, the modes withsmaller n are much more important for theirelectron-quasi-confined-phonon interactions than those with largern. In most cases, it is enough to consider the modes with n≤8 for the electron-quasi-confined-phonon interactions in a singleGaN/AlN QW. The higher frequency modes are more significant thanthe lower ones. The long-wavelength quasi-confined-optical-phononmodes are much more important for theelectron-quasi-confined-phonon interactions. The GaN-layerquasi-confined-optical-phonon energies and theirelectron-quasi-confined-phonon interaction strength are markedlyincreased due to the strains of the QW structures. The influenceof the strains on the the AlN-layer electron-quasi-confined-phononinteractions can be ignored.

Interface optical phonon-assisted scattering rates in wurtzite nitride step quantum wells with strong built-in electric field

Nonlinear Refractive Index Change And Optical Rectification In A Gan-Based Step Quantum Wells With Strong Built-In Electric Field

Exciton States in Wurtzite InGaN/GaN Quantum Wells: Strong Built-in Electric Field and Interface Optical-Phonon Effects

Intersubband optical absorptions of a GaN-based step quantum well with built-in electric field

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

POLAR VIBRATION SPECTRA OF INTERFACE AND SURFACE OPTICAL PHONONS AND THEIR FRÖHLICH ELECTRON-PHONON INTERACTIONS IN FREESTANDING SYMMETRICAL AND ASYMMETRICAL WURTZITE<font>GaN/Ga</font><sub>1-x</sub><font>Al</font><sub>x</sub><font>N</font>MULTI-LAYER HETEROSTRUCTURES

Polar interface optical phonon modes and Fröhlich electron–phonon interaction Hamiltonians in wurtzite quantum well wires

Size and dielectric dependence of interface and surface optical phonons spectra in wurtzite GaN/AlN quantum well wires

Propagating Optical Phonon Modes and Their Electron-Phonon Interaction Hamiltonians in Asymmetric Wurtzite Nitride Semiconductor Quantum Wells

Dispersive Spectra And Frohlich Electron-Phonon Interaction Hamiltonians Of Full Polar Optical Phonon States In A Wurtzite Nitride Nanowire: Quantum Size Effect

Dispersion of Interface Optical Phonons and Their Coupling with Electrons in Asymmetrical Wurtzite Gan/Ga1-Xalxn Quantum Wells

Oscillating spectra of polar IO and SO phonons and electron–IO and SO phonon couplings in a freestanding wurtzite quantum wire

Influence of Surface Optical Phonons on Exciton Binding Energies of a Quasi-One-dimensional Wurtzite GaN-based Nanowire: Quantum Size Effect

Full Polar Optical Phonon States and Dispersive Spectra of a Wurtzite GaN/AlN Rectangular Quantum Wire

Dispersions of Quasi-Confined Optical Phonon Modes and Their Electron–phonon Interactions in an Asymmetric Wurtzite AlxGa1−xN / GaN / Aly Ga1−yN Quantum Well

Fröhlich Electron–phonon Interaction Hamiltonian and Potential Distribution of a Polar Optical Phonon Mode in Wurtzite Nitride Triangular Nanowires

Polar Interface-Optical Vibrational Spectra in A Wurtzite Gan/Aln Rectangular Quantum Wire

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Electron Quasi-Confined-Optical-Phonon Interactions in Wurtzite Gan/Aln Quantum Wells

Vibrating modes and dispersive spectra of full polar optical phonons in wurtzite GaN/AlGaN rectangular nanowires

Polaron effects due to interface optical-phonons in wurtzite GaN/AlN quantum wells