Abstract:Based on the density matrix method and the iterative treatment, the second-harmonic generation (SHG) susceptibility of a wurtzite nitride coupling quantum well (CQW) with strong built-in electric fields have been theoretically investigated. The effect of the band non-parabolicity effect has been taken into account. A typical wurtzite GaN/InxGa1–xN CQW are chosen to perform numerical calculations. The localized properties of the electronic ground state and the low-excited states in the system are analyzed in detail. The calculated SHG coefficients reach the order of magnitude of 10−7m/V, which is two-order larger than the corresponding values in wurtzite single quantum wells. Moreover, it is confirmed that the SHG coefficients are not monotonic functions of the well width, barrier width and the doped concentration of the CQW systems, but have complicated dependent relations on them. The reasons resulting in these characteristics can be attributed to the intense competition between the strong built-in electric field effect and the quantum size effect for the electronic confined situation in the wurtzite CQWs. The calculated results also show that a strong SHG effect can be realized in the nitride CQW by choosing a group of optimized structural parameters and doped fraction.

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