Influence Of Applied Electric Fields On The Absorption Coefficient And Subband Energy Distances Of Intersubband Transitions In Aln/Gan Coupled Double Quantum Wells

Longbin B. Cen,岑龙斌
DOI: https://doi.org/10.1063/1.2980320
IF: 2.877
2008-01-01
Journal of Applied Physics
Abstract:The influence of applied electric fields on the absorption coefficient and subband energy distances of intersubband transitions (ISBTs) in AlN/GaN coupled double quantum wells (CDQWs) has been investigated by solving the Schrodinger and Poisson equations self-consistently. It is found that the absorption coefficient of the ISBT between the ground state and the second excited state (1(odd)-2(odd)) can be equal to zero when the electric fields are applied in AlN/GaN CDQWs, which is related to the applied electric field induced symmetry recovery of these states. Meanwhile, the energy distances between 1(odd)-2(odd) and 1(even)-2(odd) subbands have different relationships from each other with the increase of applied electric fields due to the different polarization-induced potential drops between the left and right wells. The results indicate that an electrical-optical modulator operated within the optocommunication wavelength range can be realized in spite of the strong polarization-induced electric fields in AlN/GaN CDQWs. (c) 2008 American Institute of Physics.
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