Influence of Polarization2Induced Electric Fields on Optical Properties of Intersubband Transitions in Al

Lei Shuangying,Shen Bo,Xu Fujun,Yang Zhijian,Xu Ke,Zhang Guoyi

2006-01-01

Abstract:The inf luence of p ola rization2induced elect ric f ields on t he elect ron dist ribution and t he op tical p roper2 ties of inte rsubband t ransitions ( ISB T) in Al x Ga1 x N/ GaN coupled double quantum wells (DQ Ws) is investigated by self2consistent calculation. It is f ound t hat t he p olarization2induced p otential drop leads t o an asymmet ric p o2 tential p rof ile of Al x Ga1 x N/ GaN DQ Ws even t hough t he two wells have t he same widt h and dep t h . The p olariza2 tion eff ects result in a very large Stark shif t between t he odd and even order subbands , t hus shortening t he wave2 lengt h of t he ISB T between t he f irst odd order and t he second even order (1odd22even ) subbands . Meanwhile , t he elect ron dist ribution becomes asymmet ric due t o t he p olarization eff ects , and t he absorp tion coeff icient of t he 1odd22even ISB T decreases wit h increasing p olarization f ield discontinuity.