Abstract:Influence of the width and Al composition of one well in asymmetric Al0.85Ga0.15N/GaN double quantum wells (DQWs) on the absorption coefficients and the wavelengths of the intersubband transitions (ISBTs) has been investigated by solving the Schrodinger and Poisson equations self-consistently. When the well width is chosen to be 1.91 nm, the three-energy-level DQWs are realized. The ISBT between the first odd order and the second even order subbands (the 1(odd)-2(even) ISBT) has comparable absorption coefficient with the 1(odd)-2(odd) ISBT. Their wavelengths are located at 1.3 and 1.54 mu m, respectively. When the well width is 2.77 nm, the four-energy-level DQWs are realized. The 1(odd)-2(even) and the 1(even)-2(odd) ISBTs have comparable absorption coefficients. Their wavelengths are located at 1.41 and 2.54 mu m, respectively. The energy separation between the excited subbands is determined to have the minimum value of 144 meV due to the band anticrossing interaction. The calculated results give possible application to ultrafast two-color optoelectronic devices operating within the optical communication wavelength range. (c) 2007 American Institute of Physics.

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Influence of Polarization-Induced Electric Field on Subband Structure in Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N/GaN Double Quantum Wells

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Influence of Polarization2Induced Electric Fields on Optical Properties of Intersubband Transitions in Al

Influence of Polarization-Induced Electric Fields on Coherent Electron Tunneling in AlN/GaN Coupled Double Quantum Wells

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Anticrossing Gap Between Pairs Of The Subbands In Alxga1-Xn/Gan Double Quantum Wells

Influence of Polarization Induced Electric Fields on the Wavelength and the Refractive Index of Intersubband Transitions in AlN/GaN Coupled Double Quantum Wells

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Intersubband Transition in Symmetric AlxGa1 − Xn/gan Double Quantum Wells with Applied Electric Field

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

Valence Subband Coupling Effect on Polarization of Spontaneous Emissions from Al-rich AlGaN/AlN Quantum Wells

Influence of Width of Left Well on Intersubband Transitions in AlxGa1−x N/GaN Double Quantum Wells

Anticrossing Gap between Pairs of the Subbands in Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N/GaN Double Quantum Wells

Depth profiled polarization effects in AlGaN quantum wells probed with interconnected cathodoluminescence spectroscopy and ion sputtering

Modulating Optical Polarization Properties of Al-Rich Algan/Aln Quantum Well by Controlling Wavefunction Overlap

Gate Voltage and Structure Parameter Modulated Spin Splitting in AlGaN/GaN Quantum Wells