Abstract:By solving the Schrdinger and Poisson equations self-consistently, the central barrier height, central barrier width, well width, and doping concentration in the barriers of symmetric Al_ 0.75 Ga_ 0.25 N/GaN double quantum wells (DQWs) have been studied to investigate their influences on the wavelength and absorption coefficient of intersubband transitions (ISBTs). A smaller wavelength of the ISBT between the first odd and the second even order subbands (S_ 1odd -S_ 2even ISBT) in Al_ 0.75 Ga_ 0.25 N/GaN DQWs and a larger absorption coefficient of the S_ 1odd -S_ 2even ISBT were obtained with decreased central barrier height, when the central barrier height was larger than 0.62 eV. The wavelength of the S_ 1odd -S_ 2even ISBT decreases, and the absorption coefficient of the S_ 1odd -S_ 2even ISBT increases, when the width of the central barrier is reduced. On the other hand, decreasing the width of the well will result in smaller wavelength of the S_ 1odd -S_ 2even ISBT and larger absorption coefficient of the S_ 1odd -S_ 2even ISBT when the width of the well is narrower than 1.9 nm. When doping concentration in the barriers is smaller than 10~ 18 /cm~3, the wavelength of the S_ 1odd -S_ 2even ISBT is unchanged, while the absorption coefficient of the S_ 1odd -S_ 2even ISBT increases with the doping concentration. These results provide useful guidance for realization of ultrafast two-color optoelectronic devices operating in the optical communication wavelength range.

Anticrossing Gap Between Pairs Of The Subbands In Alxga1-Xn/Gan Double Quantum Wells

Anticrossing Gap between Pairs of the Subbands in Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N/GaN Double Quantum Wells

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Influence Of Width Of Left Well On Intersubband Transitions In Alxga1-Xn/Gan Double Quantum Wells

Influence Of Polarization-Induced Electric Field On The Wavelength And The Absorption Coefficient Of The Intersubband Transitions In Alxga1-Xn/Gan Double Quantum Wells

Influence Of Polarization-Induced Electric Field On Subband Structure In A1(Chi)Ga(1-Chi)N/Gan Double Quantum Wells

Influence of Polarization-Induced Electric Field on Subband Structure and Electron Distribution in Al/sub X/ga/sub 1-X/n/gan Double Quantum Wells

Novel formula of effective width of quantum well structures

Intersubband Transition in Symmetric AlxGa1 − Xn/gan Double Quantum Wells with Applied Electric Field

Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Influence of Polarization-Induced Electric Field on Subband Structure in Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N/GaN Double Quantum Wells

Influence of polarization-induced electric fields on optical properties of intersubband transitions in AlxGa1-xN/GaN double quantum wells

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Effect Of Critical Thickness On Structural And Optical Properties Of Inxga1-Xn/Gan Multiple Quantum Wells

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Intersubband Transitions in InGaAsN/GaAs Quantum Wells

Gate Voltage and Structure Parameter Modulated Spin Splitting in AlGaN/GaN Quantum Wells

Optical Transitions In Ganas/Gaas Single Quantum Well

Intersubband optical absorption of electrons in double parabolic quantum wells of Al x Ga 1− x As/Al y Ga 1− y As