Abstract:GaAsSb/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy are studied by selectively-excited photoluminescence (SEPL) measurement. For the first time, we have simultaneously observed the PL, from both type I and type II transitions in GaAsSb/GaAs heterostructure in the SEPL. The two transitions exhibit different PL, behaviours under different excitation energy. As expected, the peak energy of type I emission remains constant in the whole excitation energy range we used, while type U transition shows a significant blue shift with increasing excitation energy. The observed blue shift is well explained in terms of electron-hole charge separation model at the interface. Time-resolved(TR) PL exhibits more type 11 characteristic of GaAsSb/GaAs QW. Moreover, the results of the excitation-power-dependent PL and TRPL provide more direct information on the type-II nature of the band alignment in GaAsSb/GaAs quantum-well structures. By combining the experimental results with some simple calculations, we have obtained the strained and unstrained valence band offsets of Q(v) = 1.145 and Q(v)(0) = 0. 76 in our samples, respectively.

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Optical Transitions In Ganas/Gaas Single Quantum Well

Optical Study of Electronic States in Gaasn

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Optical Properties and Exciton Localization in Ganas/Gaas

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells

Study of Optical Properties in GaAs1-xSbx/GaAssingle Quant Um Wells

Selectively Excited Photoluminescence of GaAs1−xNx Single Quantum Wells

Intersubband Transitions in InGaAsN/GaAs Quantum Wells

Conduction Band Offset and Electron Effective Mass in Gainnas/Gaas Quantum-Well Structures with Low Nitrogen Concentration

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography

Optical Study of Localized and Delocalized States in Gaasn/Gaas

Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Selectively Excited Photoluminescence of GaAs1−xSbx/GaAs Single Quantum Wells

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Investigation of quantum-confinement effect and Stokes shift in strained Ga1−xInxN/GaN double quantum wells by spectroscopic ellipsometry and photoluminescence

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well