Abstract:Based on the effective mass approximation, the variational theory study of the exciton properties in a strained zinc blende GaN/In x Ga 1 − x N/GaN/In y Ga 1 − y N/GaN coupled double quantum well is presented considering the combined effects of hydrostatic pressure, strain, and external electric field. The results show that the exciton binding energy first increases, it achieves a maximum value, and then decreases with the reduction of the well width. Contrarily, the exciton binding energy decreases slightly first, it reaches a minimum value, and then increase gradually until a constant with the enhancement of the middle barrier thickness. Meantime, the pronounced dependencies of the exciton binding energy, interband transition energy, emission wavelength, oscillator strength, and radiation decay time of the coupled double quantum well on hydrostatic pressure are analyzed systematically. As the hydrostatic pressure increases, the exciton binding energy increases linearly, and the interband transition energy (emission wavelength) is proportional (inversely) to hydrostatic pressure. In addition, the variation of the exciton binding energy and Stark shift with the external electric field is explored detailedly.

Investigation of quantum-confinement effect and Stokes shift in strained Ga1−xInxN/GaN double quantum wells by spectroscopic ellipsometry and photoluminescence

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells

Effect Of Critical Thickness On Structural And Optical Properties Of Inxga1-Xn/Gan Multiple Quantum Wells

The Effect of Inserting Strain-Compensated Ganas Layers on the Luminescence Properties of Gainnas/Gaas Quantum Well

Effects of strain and hydrostatic pressure on exciton properties in asymmetric zinc-blende (In,Ga)N/GaN coupled double quantum wells

Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Study of Optical Properties in GaAs1-xSbx/GaAssingle Quant Um Wells

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Effects of electric field and hydrostatic pressure on the exciton states in strained zinc-blende In x Ga 1 − x N-GaN coupled double quantum wells

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Enhancement Of Electron-Longitudinal Optical Phonon Coupling In Highly Strained Ingan/Gan Quantum Well Structures

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Optical Transitions In Ganas/Gaas Single Quantum Well

Linear and Nonlinear Intersubband Optical Absorptions and Refractive Index Changes in InGaN Strained Single Quantum Wells： Strong Built-in Electric Field Effects

Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

Raman Spectra and Photoluminescence Spectra of InGaN/GaN Multiquantum Wells Annealed

Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/ga/sub 0.8/N-Gan Quantum Wells: Comparison Between Experimental and Theoretical Studies