Abstract:Using the Huang-Zhu model [K. Huang and B.-F. Zhu, Phys. Rev. B 38, 13377 (1988)] for the optical phonons and associated carrier-phonon interactions in semiconductor superlattices, the effects of longitudinal electric field on the energy-loss rates (ELRs) of hot carriers as well as on the hot-phonon effect (HPE) in GaAs∕AlAs quantum wells (QWs) are studied systematically. Contributions of various bulklike and interface phonons to the hot-carrier relaxation are compared in detail, and comprehensively analyzed in relation to the intrasubband and intersubband scatterings for quantum cascade lasers. Due to the broken parity of the electron (hole) states in the electric field, the bulklike modes with antisymmetric potentials are allowed in the intrasubband relaxation processes, as well as the modes with symmetric potentials. As the interface phonon scattering is strong only in narrow wells, in which the electric field affects the electron (hole) states little, the ELRs of hot carriers through the interface phonon scattering are not sensitive to the electric field. The HPE on the hot-carrier relaxation process in the medium and wide wells is reduced by the electric field. The influence of the electric field on the hot-phonon effect in quantum cascade lasers is negligible. When the HPE is ignored, the ELRs of hot electrons in wide QWs are decreased noticeably by the electric field, but slightly increased by the field when considering the HPE. In contrast with the electrons, the ELRs of hot holes in wide wells are increased by the field, irrespective of the HPE.

Effect of an Electric Field on Electron-Interface-Phonon Scattering in A Graded Quantum Well

Electron-phonon Scattering Inga1−xal

Electron–optical–phonon Scattering in Non-Square Quantum-Well Structures

Electron-interface Phonon Scattering in GaAs/Ga1-xAlxAs Quantum-Well Structures with Interface Roughness

The Effect of Transverse Electric Field on the Electron-Optical-Phonon Scattering Rates in Quantum Wires

Optical Interface Phonon in Graded Quantum Well Structures

Electric-Field-Dependent Intersubband Transition Via Optical Phonons In A Doped-Thin-Layer Inserted Quantum-Well Structure

Properties of Electrons and Excitons in Graded Quantum Wells of Ga1-xAlxAs in an Electric Field

Analysis of the Scattering of Electrons by Special Vibrational Modes in A Gaas Quantum Well with A Thin Alas Middle Barrier: Mobility Modulated by A Transversal Electric Field

Influence of Longitudinal Electric Field on the Hot-Phonon Effect in Quantum Wells

Intrasubband electron-phonon scattering in doped thin-layer inserted quantum well

SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD

Effects of Confined Longitudinal and Interface Optical Phonons on Excitons in an Asymmetric Quantum Well

Subband Effects on High‐Field Electron Transport in Quasi‐One‐Dimensional Systems

Effect of electric field on excitons in wide quantum wells

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Electron Mobility in A Gaas/Alas Quantum Well with A Thin Alas Middle Barrier

Dependence of Energy Shifts on the Field Direction in a Gradedga1−x

Chemical composition fluctuations at interfaces in quantum well structures: effect on interface phonon modes

Interface optical phonon-assisted scattering rates in wurtzite nitride step quantum wells with strong built-in electric field

Effects of built-in electric field on polarons in wurtzite GaN/AlN quantum wells