Abstract:The effects of inversion asymmetry on the anisotropic optical transition in the presence of electric field (Pockels effect) in GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As quantum wells and superlattices are investigated theoretically. Within an 8\ifmmode\times\else\texttimes\fi{}8 k\ensuremath{\cdot}p effective mass Hamiltonian formalism, in which the linear k, ${\mathit{k}}^{3}$, \ensuremath{\epsilon} (strain due to the piezoelectric effect), \ensuremath{\epsilon}k, and Rashba terms are taken into account, we have derived the renormalized effective Hamiltonian for the electron and hole, respectively. The effects of the inversion asymmetry and the hole mixing on the spin-split subband structures and the dependence of optical transition matrix elements on the polarization of incident light are fully presented. The microscopic model clearly shows that the inversion asymmetry is responsible for the Pockels effect. The roles played by the hole mixing in the enhanced quantum well Pockels effect mediated by the electron-hole pairs are shown by our calculations. Thus, we develop a theory with exciton states with eight spin components (due to the broken twofold degeneracy of the electrons) in the quantum well and calculate the excitonic spectra. The symmetry analysis and numerical results indicate that the excitonic anisotropic behavior results from the interference between different spin components of holes, which, owing to the heavy- and light-hole mixing, is enhanced significantly compared with the bulk material, especially for those exciton states whose dominant component does not coincide with its optically active component. Comparison between theory and experiment is discussed.

Properties of Electrons and Excitons in Graded Quantum Wells of Ga1-xAlxAs in an Electric Field

SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Effect of an Electric Field on Electron-Interface-Phonon Scattering in A Graded Quantum Well

Dependence of Energy Shifts on the Field Direction in a Gradedga1−x

Exciton Spectra In Gaas/Ga1-Xalxas Quantum Wells In An Externally Applied Electric-Field

Effect of Valence-Band Hybridization on the Exciton Spectra in Gaas-Ga1-Xalxas Quantum-Wells

Behavior of exciton in direct−indirect band gap Al x Ga 1−x As crystal lattice quantum wells

High Pressure Behavior of Electronic States in GaAs/Ga1−xAlxAs Multiple Quantum Wells

Zeeman Splitting of Excitons in GaAs/AlGaAs Quantum Wells in the Faraday Geometry

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

Effect of electric field on excitons in wide quantum wells

Electronic Properties of Vacancy‐Induced Structures in AlAs/GaAs Superlattices

Excitons in the wurtzite AlGaN/GaN quantum-well heterostructures

Electronic and nonlinear optical properties in Al x Ga 1 − x As/GaAs Gaussian confinement quantum dot under applied electric field

Electron–optical–phonon Scattering in Non-Square Quantum-Well Structures

Optical Interface Phonon in Graded Quantum Well Structures

Linear and Nonlinear Intersubband Optical Properties in A Step Quantum Well with an Applied Electric Field

Electron-phonon Scattering Inga1−xal

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Exciton states in strained GaN/AlxGa1-xN quantum dots