Abstract:Strongly-coupled quantum dot molecules (QDMs) are widely deployed in the design of a variety of optoelectronic, photovoltaic, and quantum information devices. An efficient and optimized performance of these devices demands engineering of the electronic and optical properties of the underlying QDMs. The application of electric fields offers a knob to realise such control over the QDM characteristics for a desired device operation. We perform multi-million-atom atomistic tight-binding calculations to study the influence of electric fields on the electron and hole wave function confinements and symmetries, the ground-state transition energies, the band-gap wavelengths, and the optical transition modes. The electrical fields both parallel ($\vec{E_p}$) and anti-parallel ($\vec{E_a}$) to the growth direction are investigated to provide a comprehensive guide on the understanding of the electric field effects. The strain-induced asymmetry of the hybridized electron states is found to be weak and can be balanced by applying a small $\vec{E_a}$ electric field, of the order of 1 KV/cm. The strong interdot couplings completely break down at large electric fields, leading to single QD states confined at the opposite edges of the QDM. This mimics a transformation from a type-I band structure to a type-II band structure for the QDMs, which is a critical requirement for the design of intermediate-band solar cells (IBSC). The analysis of the field-dependent ground-state transition energies reveal that the QDM can be operated both as a high dipole moment device by applying large electric fields and as a high polarizibility device under the application of small electric field magnitudes. [abstract is truncated to fit the character count of arXiv]

Electronic and nonlinear optical properties in Al x Ga 1 − x As/GaAs Gaussian confinement quantum dot under applied electric field

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Electric field effect on anisotropic nonlinear optical properties of GaN/AlN quantum dots with multitype-tunable shape

GaAs Cone-Shell Quantum Dots in a Lateral Electric Field: Exciton Stark-Shift, Lifetime, and Fine-Structure Splitting

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Electro-Optic Effect in A Semi-Parabolic Quantum Well with an Applied Electric Field

Exciton states in strained GaN/AlxGa1-xN quantum dots

Exciton states in InGaAsP/InP core–shell quantum dots under an external electric field

SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD

The Effects of A Stress Field and Chemical Diffusion on Electronic Behaviour in Inas/Gaas Quantum Dots

Dependence of Energy Shifts on the Field Direction in a Gradedga1−x

Finite element method simulation of electronic and optical properties in multi-InAs/GaAs quantum dots

The Electronic States And The Optical Absorption For An Asymmetrical Quantum Well Applied With An External Electric Field

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Electric Field Effect on the Second-Order Nonlinear Optical Properties of Parabolic and Semiparabolic Quantum Wells

Second-Harmonic Generation in Asymmetric Quantum Dots in the Presence of A Static Magnetic Field

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Optical Properties of GaN/AlN Quantum Dots under Intense Laser Field

Magnetic field effect on the energy levels of an exciton in a GaAs quantum dot: Application for excitonic lasers

Understanding electric field control of electronic and optical properties of strongly-coupled multi-layer quantum dot molecules

Nonlinear optical rectification in asymmetric quantum dots with an external static magnetic field