Abstract:Effects of the well width and an electric field on electron-phonon scattering are studied for two kinds of quantum-well structures. One is a symmetrical single quantum well (SSQW) ${\mathrm{Ga}}_{0.6}$${\mathrm{Al}}_{0.4}$As/GaAs/${\mathrm{Ga}}_{0.6}$${\mathrm{Al}}_{0.4}$As, and the other is an asymmetrical single quantum well (ASQW) ${\mathrm{Ga}}_{0.6}$${\mathrm{Al}}_{0.4}$As/GaAs-${\mathrm{Ga}}_{0.8}$${\mathrm{Al}}_{0.2}$As/${\mathrm{Ga}}_{0.6}$${\mathrm{Al}}_{0.4}$As. Calculated results reveal that for both structures without an electric field, the intrasubband and intersubband scattering rates due to interface phonons, respectively, decrease and increase with increasing well width while those due to confined phonons increase with increasing well width. It is found that the difference between SSQW and ASQW structures results in a significant change of phonon modes and electronic structure and consequently the dependence of scattering rates on an applied electric field is quite different for the two structures, and that the intersubband scattering rates can be considerably changed by applied electric field as the well width is large. The result would be useful for analyzing experimental results and designing some devices in the future.

SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD

Properties of Electrons and Excitons in Graded Quantum Wells of Ga1-xAlxAs in an Electric Field

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Effect of electric field on excitons in wide quantum wells

Effective Well Width Analysis in Quantum Well Struct ures

Exciton Spectra In Gaas/Ga1-Xalxas Quantum Wells In An Externally Applied Electric-Field

Effect of Valence-Band Hybridization on the Exciton Spectra in Gaas-Ga1-Xalxas Quantum-Wells

Effect of an Electric Field on Electron-Interface-Phonon Scattering in A Graded Quantum Well

Dependence of Energy Shifts on the Field Direction in a Gradedga1−x

Subband Effects on High‐Field Electron Transport in Quasi‐One‐Dimensional Systems

Exciton states in InGaAsP/InP core–shell quantum dots under an external electric field

Subband structures and intersubband optical transitions in lateral surface superlattices under electric fields

The Effect of Transverse Electric Field on the Electron-Optical-Phonon Scattering Rates in Quantum Wires

Electron-phonon Scattering Inga1−xal

Electro-Optic Effect in A Semi-Parabolic Quantum Well with an Applied Electric Field

Band Hybridization Effect in InAs/GaSb Based Quantum Wells

Electronic and nonlinear optical properties in Al x Ga 1 − x As/GaAs Gaussian confinement quantum dot under applied electric field

Electric control of inverted gap and hybridization gap in type II InAs/GaSb quantum wells

Hole subbands in quantum wells and superlattices

The Electronic States And The Optical Absorption For An Asymmetrical Quantum Well Applied With An External Electric Field

Electric-Field-Dependent Intersubband Transition Via Optical Phonons In A Doped-Thin-Layer Inserted Quantum-Well Structure